A package carrier board includes a first circuit build-up structure, a patterned magnetic conductive metal layer, a plurality of first conductive pillar, a second insulating layer, and a second circuit build-up structure. The patterned magnetic conductive metal layer is disposed above the first circuit build-up structure, and the cross-sectional pattern of the patterned magnetic conductive metal layer is L-shaped and/or U-shaped. The first conductive pillars are disposed on the first circuit build-up structure and located outside of the patterned magnetic conductive metal layer. The second insulating layer covers the patterned magnetic conductive metal layer and the first conductive pillars. The second circuit build-up structure is disposed on the second insulating layer. The first circuit build-up structure, the first conductive pillars, the second insulating layer, and the second circuit build-up structure are combined to form an inductive circuit structure. Additionally, a manufacturing method for the package carrier board is also disclosed.

An interconnect substrate includes an interconnect layer, an insulating layer covering the interconnect layer, an electrode disposed on an upper surface of the interconnect layer and protruding from an upper surface of the insulating layer, and a groove formed in the upper surface of the insulating layer around the electrode, wherein the electrode includes a first portion whose side surface is covered with the insulating layer, a second portion whose entire side surface is located outside the insulating layer, the second portion being partially located inside the groove and partially protruding above the upper surface of the insulating layer, and a metal layer covering both an upper surface of the second portion and the entire side surface of the second portion.

HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

A package carrier includes a signal board, a power board and a connection layer. The signal board includes a plurality of first circuits. The power board includes a plurality of second circuits. A line width of each of the first circuits is less than a line width of each of the second circuits, and a first thickness of the signal board is less than a second thickness of the power board. The connection layer is disposed between the signal board and the power board, wherein the power board is electrically connected to the signal board through the connection layer.

Chip packages are described herein that includes chiplets embedded in a core of a substrate of the chip package, such as a package substrate or an interposer. In one example, the chiplet includes voltage regulation circuitry that is coupled through a substrate core embedded inductor to an integrated circuit (IC) die mounted to the substrate.

HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

An embedded and packaged heat dissipation structure and a manufacturing method therefor, and a semiconductor are disclosed. The method includes: forming a first semi-finished plate; forming a heat dissipation plate based on the first metal layer; manufacturing a heat dissipation copper column on the heat dissipation plate; providing a dielectric layer; laminating a second metal layer on the dielectric layer; partially etching the second metal layer and the dielectric layer to form a microchannel; manufacturing a thin metal layer to enable an inner wall of the microchannel to form an isolation layer with an integrated structure to obtain a second semi-finished plate; manufacturing a first cover layer; and laminating the first cover layer and the second semi-finished plate to connect the first cover layer and the isolation layer in a sealed manner to obtain the embedded and packaged heat dissipation structure.

Disclosed is a method of manufacturing a chiplet-fine-interconnection-package structure, comprising: mounting at least two chips on a first side surface of a substrate and preparing a temporary bonding layer on the chips, preparing a plastic package layer on a second side surface of the substrate, wherein the substrate is prepared with microvias to allow plastic package materials to flow from the microvias into an area between the first side surface of the substrate and the temporary bonding layer to prepare the plastic package layer; releasing the temporary bonding layer, and bonding a silicon bridge structure on the first pin-arrays of the two adjacent chips. The solution provided by the present invention makes it unnecessary to remove the substrate in the subsequent process and to perform grinding and thinning process on the corresponding position of the plastic package layer, thus simplifying the packaging process steps and reducing the packaging cost.

An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.

An integrated circuit (IC) die including a top surface and a bottom surface, a plurality of spaced apart ground connection traces positioned between the top surface and the bottom surface; with a hole in the die exposing the plurality of spaced apart ground connection traces.