In an embodiment, a package includes an interposer; a first integrated circuit device attached to the interposer, wherein the first integrated circuit device includes a die and a heat dissipation structure, the die having an active surface facing the interposer and an inactive surface opposite to the active surface, the heat dissipation structure attached to the inactive surface of the die and including a plurality of channels recessed from a first surface of the heat dissipation structure, the first surface of the heat dissipation structure facing away from the die; and an encapsulant disposed on the interposer and laterally around the die and the heat dissipation structure, wherein a top surface of the encapsulant is coplanar with the top surface of the heat dissipation structure.

A package structure and method of forming the same are provided. The package structure includes a die, a first dielectric layer, a second dielectric layer and a conductive terminal. The first dielectric layer covers a bottom surface of the die and includes a first edge portion and a first center portion in contact with the bottom surface of the die. The first edge portion is thicker than the first center portion. The second dielectric layer is disposed on the first dielectric layer and laterally surrounding the die. The second dielectric layer includes a second edge portion on the first edge portion and a second center portion in contact with a sidewall of the die. The second edge portion is thinner than the second center portion. The conductive terminal is disposed over the die and the second dielectric layer and electrically connected to the die.

A multi-chip module hybrid integrated circuit (MCM-HIC) provides cold spare support to an apparatus comprising a plurality of ICs and/or other circuits that are not cold spare compliant. At least one core IC and at least one cold spare chiplet are installed on an interconnecting substrate having a plurality of power zones to which power can be applied and withdrawn as needed. When powered, the cold spare chiplets serve as mediators and interfaces between the non cold spare compliant circuits. When the cold spare chiplets are at least partly unpowered, they protect all interconnected circuits, and ensure that interconnected circuits that remain powered are not hindered by unpowered interconnected circuits. Cold spare chiplets can extend across boundaries between power zones. External circuits can be exclusively interfaced to a subset of the power zones. Separate power circuits within a power zone can be sequenced during application and withdrawal of power.

A multi-chip module hybrid integrated circuit (MCM-HIC) provides cold spare support to an apparatus comprising a plurality of ICs and/or other circuits that are not cold spare compliant. At least one core IC and at least one cold spare chiplet are installed on an interconnecting substrate having a plurality of power zones to which power can be applied and withdrawn as needed. When powered, the cold spare chiplets serve as mediators and interfaces between the non cold spare compliant circuits. When the cold spare chiplets are at least partly unpowered, they protect all interconnected circuits, and ensure that interconnected circuits that remain powered are not hindered by unpowered interconnected circuits. Cold spare chiplets can extend across boundaries between power zones. External circuits can be exclusively interfaced to a subset of the power zones. Separate power circuits within a power zone can be sequenced during application and withdrawal of power.

A method of manufacturing a 3DIC structure includes the following processes. A die is bonded to a wafer. A first dielectric layer is formed on the wafer and laterally aside the die. A second dielectric material layer is formed on the die and the first dielectric layer. A portion of the second dielectric material layer over a non-edge region of the wafer is selectively removed to form a protruding portion over an edge region of the wafer. The second dielectric material layer is planarized to form a second dielectric layer on the first dielectric layer and the die. A bonding film is formed on the second dielectric layer. A carrier is bonded to the wafer through the bonding film.

A display device including a film substrate including first and second surfaces, the first surface being opposite to the second surface; a semiconductor chip disposed on the first surface and including an input terminal and a test terminal, which are arranged in a first direction; a first wire extending from the input terminal on the first surface along a second direction, which intersects the first direction; and a second wire including a first extended portion, which extends along the first surface, a second extended portion, which extends along the second surface, and a first via, which penetrates the film substrate and connects the first extended portion and the second extended portion, wherein the first extended portion extends from the test terminal in the second direction and is connected to the first via, and the second extended portion extends from the first via to an edge of the second surface.

One or more embodiments are directed to semiconductor packages and methods in which one or more electrical components are positioned between a semiconductor die and a surface of a substrate. In one embodiment, a semiconductor package includes a substrate having a first surface. One or more electrical components are electrically coupled to electrical contacts on the first surface of the substrate. A semiconductor die is positioned on the one or more electrical components, and the semiconductor die has an active surface that faces away from the substrate. An adhesive layer is on the first surface of the substrate and on the one or more electrical components, and the semiconductor die is spaced apart from the one or more electrical components by the adhesive layer. Wire bonds are provided that electrically couples the active surface of the semiconductor die to the substrate.

A display device including a film substrate including first and second surfaces, the first surface being opposite to the second surface; a semiconductor chip disposed on the first surface and including an input terminal and a test terminal, which are arranged in a first direction; a first wire extending from the input terminal on the first surface along a second direction, which intersects the first direction; and a second wire including a first extended portion, which extends along the first surface, a second extended portion, which extends along the second surface, and a first via, which penetrates the film substrate and connects the first extended portion and the second extended portion, wherein the first extended portion extends from the test terminal in the second direction and is connected to the first via, and the second extended portion extends from the first via to an edge of the second surface.

A semiconductor package includes a package substrate, a lower semiconductor chip on the package substrate, a heat emission member on the lower semiconductor chip, the heat emission member having a horizontal unit and a vertical unit connected to the horizontal unit, a first semiconductor chip stack and a second semiconductor chip stack on the horizontal unit, and a molding member that surrounds the lower semiconductor chip, the first and second semiconductor chip stacks, and the heat emission member. The vertical unit may be arranged between the first semiconductor chip stack and the second semiconductor chip stack, and an upper surface of the vertical unit may be exposed in the molding member.

An electronics assembly includes a semiconductor device having a first device surface and at least one device conductive layer disposed directly thereon. A cooling structure coupled to the semiconductor device includes a manifold layer, a microchannel layer bonded to the manifold layer, at least one planar side cooling structure, and one or more cooling structure conductive layers. The manifold layer includes a fluid inlet and a fluid outlet and defines a first cooling structure surface. The microchannel layer comprises at least one microchannel fluidly coupled to the fluid inlet and the fluid outlet and defines a second cooling structure surface opposite from the first cooling structure surface. The planar side cooling structure surface is transverse to the first and the second cooling structure surfaces. The cooling structure conductive layers are disposed directly on the first cooling structure surface, the second cooling structure surface, and the planar side cooling structure surface.