Provided are a package structure and a method of manufacturing the same. The package structure includes a die, a first passive device, a plurality of through insulator vias (TIVs), an encapsulant, and a plurality of conductive connectors. The die has a front side and a backside opposite to each other. The first passive device is disposed aside the die. The TIVs are disposed between the die and the first passive device. The encapsulant laterally encapsulates the TIVs, the first passive device, and the die. The conductive connectors are disposed on the backside of the die, wherein the conductive connectors are electrically connected to the die and the first passive device by a plurality of solders.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

Disclosed herein are structures and techniques for underfill flow management in electronic assemblies. For example, in some embodiments, an electronic assembly may include a first component, a second component, an underfill on the first component and at least partially between the first component and the second component, and a material at a surface of the first component, wherein the material is outside a footprint of the second component, and the underfill contacts the material with a contact angle greater than 50 degrees.

In various embodiments, a bonded structure is disclosed. The bonded structure can include an element and a passive electronic component having a first surface bonded to the element and a second surface opposite the first surface. The passive electronic component can comprise a first anode terminal bonded to a corresponding second anode terminal of the element and a first cathode terminal bonded to a corresponding second cathode terminal of the element. The first anode terminal and the first cathode terminal can be disposed on the first surface of the passive electronic component.

According to one configuration, an inductor device comprises: core material and one or more electrically conductive paths. The core material is magnetically permeable and surrounds (envelops) the one or more electrically conductive paths. Each of the electrically conductive paths extends through the core material of the inductor device from a first end of the inductor device to a second end of the inductor device. The magnetically permeable core material is operative to confine (guide, carry, convey, localize, etc.) respective magnetic flux generated from current flowing through a respective electrically conductive path. The core material stores the magnetic flux energy (i.e., first magnetic flux) generated from the current flowing through the first electrically conductive path. One configuration herein includes a power converter assembly comprising a stack of components including the inductor device as previously described as well as a first power interface, a second power interface, and one or more switches.

Embodiments include systems in packages (SiPs) and a method of forming the SiPs. A SiP includes a package substrate and a first modularized sub-package over the package substrate, where the first modularized sub-package includes a plurality of electrical components, a first mold layer, and a redistribution layer. The SiP also includes a stack of dies over the package substrate, where the first modularized sub-package is disposed between the stack of dies. The SiP further includes a plurality of interconnects coupled to the stack of dies, the first modularized sub-package, and the package substrate, wherein the redistribution layer of the first modularized sub-package couples the stack of dies to the package substrate with the plurality of interconnects. The SiP may enable the redistribution layer of the first modularized sub-package to couple the electrical components to the stacked dies and the package substrate without a solder interconnect.

One or more embodiments are directed to semiconductor packages and methods in which one or more electrical components are positioned between a semiconductor die and a surface of a substrate. In one embodiment, a semiconductor package includes a substrate having a first surface. One or more electrical components are electrically coupled to electrical contacts on the first surface of the substrate. A semiconductor die is positioned on the one or more electrical components, and the semiconductor die has an active surface that faces away from the substrate. An adhesive layer is on the first surface of the substrate and on the one or more electrical components, and the semiconductor die is spaced apart from the one or more electrical components by the adhesive layer. Wire bonds are provided that electrically couples the active surface of the semiconductor die to the substrate.

A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.

According to one configuration, an inductor device comprises: core material and one or more electrically conductive paths. The core material is magnetically permeable and surrounds (envelops) the one or more electrically conductive paths. Each of the electrically conductive paths extends through the core material of the inductor device from a first end of the inductor device to a second end of the inductor device. The magnetically permeable core material is operative to confine (guide, carry, convey, localize, etc.) respective magnetic flux generated from current flowing through a respective electrically conductive path. The core material stores the magnetic flux energy (i.e., first magnetic flux) generated from the current flowing through the first electrically conductive path. One configuration herein includes a power converter assembly comprising a stack of components including the inductor device as previously described as well as a first power interface, a second power interface, and one or more switches.

A semiconductor device is described that includes an integrated circuit coupled to a first semiconductor substrate with a first set of passive devices (e.g., inductors) on the first substrate. A second semiconductor substrate with a second set of passive devices (e.g., capacitors) may be coupled to the first substrate. Interconnects in the substrates may allow interconnection between the substrates and the integrated circuit. The passive devices may be used to provide voltage regulation for the integrated circuit. The substrates and integrated circuit may be coupled using metallization.