H01L2224/32265

Coupling of integrated circuits (ICS) through a passivation-defined contact pad
11450630 · 2022-09-20 · ·

Components may be placed on an active side of a wafer as part of wafer-level chip scale packaging (WLCSP) for use in electronic devices. Pad layouts for the components on an active side of a wafer may be passivation-defined by forming a conductive terminal over a first dielectric layer and a forming a passivating, second dielectric layer over the conductive terminal. Openings formed in the second dielectric layer define component contacts to the conductive terminal and circuitry on the wafer coupled to the conductive terminal. Trenches may be used between pairs of contact pads to further reduce issues resulting from short circuits and/or underfills. A conductive pad may further be deposited in the opening to form underbump metallization (UBM) for coupling the component to the wafer.

DEVICES AND METHODS OF VERTICAL INTEGRATIONS OF SEMICONDUCTOR CHIPS, MAGNETIC CHIPS, AND LEAD FRAMES
20220157715 · 2022-05-19 ·

Techniques for providing vertical integrations of semiconductor chips, magnetic chips, and lead frames. The techniques can include fabricating an integrated circuit (IC) device as a multi-layer IC structure that includes, within a sealed protective enclosure, a first layer including at least one magnetic chip, a second layer including at least one semiconductor chip or die, and a lead frame. The techniques can further include vertically bonding the magnetic chip in the first layer onto the topside of the lead frame, and vertically bonding the semiconductor chip or die in the second layer on top of the magnetic chip to form a multi-layer IC structure.

Semiconductor package with die stacked on surface mounted devices
11276628 · 2022-03-15 · ·

One or more embodiments are directed to semiconductor packages and methods in which one or more electrical components are positioned between a semiconductor die and a surface of a substrate. In one embodiment, a semiconductor package includes a substrate having a first surface. One or more electrical components are electrically coupled to electrical contacts on the first surface of the substrate. A semiconductor die is positioned on the one or more electrical components, and the semiconductor die has an active surface that faces away from the substrate. An adhesive layer is on the first surface of the substrate and on the one or more electrical components, and the semiconductor die is spaced apart from the one or more electrical components by the adhesive layer. Wire bonds are provided that electrically couples the active surface of the semiconductor die to the substrate.

Semiconductor package with top circuit and an IC with a gap over the IC

A packaged integrated circuit (IC) includes a leadframe including a die pad and leads around the die pad, an analog IC die having first bond pads on its active top side, and a second circuit including second circuit bond pads attached to the analog IC die by an attachment layer configured as a ring with a hollow center that provides an inner gap. A bottom side of the analog IC or the second circuit is attached to the die pad. Bond wires couple at least some of the first bond pads or some of the second circuit bond pads to the leads, and there is a second coupling between others of the second circuit bond pads and others of the first bond pads. A mold compound is for encapsulating the second circuit and the analog IC.

ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF

An electronic package is provided, which is disposed with a second electronic component and a third electronic component on a first electronic component as a carrier structure, such that there is no need to match a layout size of the conventional package substrate. Therefore, the first electronic component can be designed as a System on a Chip (SoC) with a smaller size to improve the process yield.

Impedance matching transceiver

Impedance matching transceivers may include a tuning circuit to match the transceiver module impedance to the housing conditions. In some examples, the impedance matching is controlled by tuning-circuits that may be integrated into a transceiver module by using a fan-out package (FO PKG). One example of a tuning circuit may include a switch to isolate the parallel capacitors, such that when the switch is on or closed the parallel capacitors are active.

ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF

An electronic package is provided, which stacks an electronic structure as an integrated voltage regulator on an electronic component to facilitate close-range cooperation with the electronic component for electrical transmission.

ELECTRONIC PACKAGE AND MANUFACTURING METHOD THEREOF

An electronic package is provided, which stacks an electronic structure as an integrated voltage regulator on an electronic component to facilitate close-range cooperation with the electronic component for electrical transmission.

Wafer-Level Passive Array Packaging

Wafer level passive array packages, modules, and methods of fabrication are described. In an embodiment, a module includes a circuit board, and a package mounted on the circuit board in which the package includes a plurality of passive components bonded to a bottom side of the die and a plurality of landing pads of the circuit board.

SEMICONDUCTOR PACKAGE INCLUDING SEMICONDUCTOR CHIP AND CAPACITOR
20210327831 · 2021-10-21 · ·

A semiconductor package may include a semiconductor chip mounted on a package substrate, and capacitors. The capacitors may be disposed between the package substrate and the first semiconductor chip, and the capacitors may support the first semiconductor chip.