An anisotropic conductive film (ACF) is disclosed. In one approach, the ACF includes a non-reflective adhesive layer including a top surface, a plurality of conductive particles included with the non-reflective adhesive layer, and a reflective adhesive layer disposed along the top surface of the non-reflective adhesive layer.

A method for assembling a first substrate and a second substrate via metal adhesion layers, the method including: depositing, on a surface of each of the first and second substrates, a metal layer with a thickness controlled to limit surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at an end of the depositing. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.

A method for assembling a first substrate and a second substrate via metal adhesion layers, the method including: depositing, on a surface of each of the first and second substrates, a metal layer with a thickness controlled to limit surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at an end of the depositing. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Embodiments include a wafer-on-wafer bonding where each wafer includes a seal ring structure around die areas defined in the wafer. Embodiments provide a further seal ring spanning the interface between the wafers. Embodiments may extend the existing seal rings of the wafers, provide an extended seal ring structure separate from the existing seal rings of the wafers, or combinations thereof.

Embodiments include a wafer-on-wafer bonding where each wafer includes a seal ring structure around die areas defined in the wafer. Embodiments provide a further seal ring spanning the interface between the wafers. Embodiments may extend the existing seal rings of the wafers, provide an extended seal ring structure separate from the existing seal rings of the wafers, or combinations thereof.

A metal paste contains (A) 75% to 90% by weight of at least one metal that is present in the form of particles comprising a coating that contains, at least one organic compound, (B) 0% to 12% by weight of at least one metal precursor, (C) 6% to 20% by weight of a mixture of at least two organic solvents, and (D) 0% to 10% by weight of at least one sintering aid. 30% to 60% by weight of the solvent mixture (C) consists of at least one 1-hydroxyalkane with 16-20 C-atoms that is non-substituted except for a methyl substitution on the penultimate C-atom.

Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.