The disclosure provides a portable light. The portable light includes a housing having a front surface, a rear surface, and an internal space for receiving electronic components and a battery. The portable light also includes a chip-on-board (COB) assembly. The COB assembly includes a substrate, a matrix of individual light emitting diode (LED) chips mounted to the substrate, and an outer coating covering the matrix of LED chips. The front surface of the housing is curved in one direction and the COB assembly is correspondingly curved and mounted to the front surface, such that individual LED chips are positioned about the curve and orientated to direct light outwardly about the curve to provide a collective beam angle greater than 220 degrees. The portable light further includes a front lens cover to protect the COB assembly.

A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires are connected.

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

A semiconductor module includes a power element, a signal wiring, and a heat sink. The signal wiring is connected to a signal pad of the power element. The heat sink cools the power element. The power element has an active area provided by a portion where the signal pad is formed. The signal pad is thermally connected to the heat sink via the signal wiring.

Provided is an electronic apparatus including a metal wiring. The metal wiring includes a plurality of first regions covered with a solder layer, a second region provided between two first regions of the plurality of first regions, and a third region having a nitrogen amount of 20 atoms % or more. An oxygen amount is largest in the second region, followed by at least one of the plurality of first regions, and then by the third region. The nitrogen amount may be largest in the third region, followed by at least one of the plurality of first regions, and then by the second region.

A method of repairing a display panel and a repaired display panel are provided. The display panel includes a panel substrate, a plurality of micro LEDs arranged on the panel substrate, and a molding member covering the plurality of micro LEDs. The molding member includes a first molding member and a second molding member disposed in a region surrounded by the first molding member. The second molding member has a composition or a shape different from that of the first molding member, and the second molding member surrounds at least one side surface of the plurality of micro LEDs.

A light-emitting device includes a first carrier, which includes a side surface between a first surface and a second surface, upper conductive pads on the first surface, and lower conductive pads under the second surface; a RDL pixel package includes a RDL which includes bonding pads and bottom electrodes, and the light-emitting units on the RDL, and connected to the bonding pads. A light-transmitting layer on the RDL and covers the light-emitting units, an upper surface, a lower surface, and a lateral surface between the upper surface and the lower surface. The RDL pixel package is on the first surface and electrically connected to the upper conductive pads. A protective layer covers the first surface and contacting the side surface of the RDL pixel package. The lower electrodes and the upper conductive pads are connected, and the distance between two adjacent bonding pads is less than 30 μm.

A display device includes a substrate including a display area, a non-display area and a conductive material, a display layer on a top surface of the substrate and including a light-emitting element, a signal line extending from the display layer and into the non-display area, a conductive adhesive member on a bottom surface of the substrate, and a circuit board which is electrically connected to the signal line by contact of the circuit board with the conductive adhesive member, together with contact of the conductive material in the substrate with both the signal line and the conductive adhesive member.

A temporary fixing composition is provided that is used to temporarily fix a first bonding target material and a second bonding target material to each other before the two bonding target materials are bonded to each other. The temporary fixing composition contains a first organic component having a viscosity of less than 70 mPa.Math.s at 25° C. and a boiling point of 200° C. or lower and a second organic component having a viscosity of 70 mPa.Math.s or greater at 25° C. and a boiling point of 210° C. or higher. It is preferable that, when thermogravimetry-differential thermal analysis is performed under the conditions at a temperature increase rate of 10° C./min in a nitrogen atmosphere with a sample mass of 30 mg, the 95% mass reduction temperature is lower than 300° C.