A thin film transistor, a method for fabricating the same, an array substrate, a display panel, and a display device are provided. The thin film transistor includes a substrate, and an active layer on the substrate, wherein the active layer includes a poly-silicon layer and has a channel region and two electrode connection regions respectively on two sides of the channel region, and the channel region includes a plurality of lightly drain doping segments, which are spaced apart along from one of the electrode connection regions to the other electrode connection region, and channel segments located between the lightly drain doping segments.

A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The first insulating layer covers a top surface and a side surface of the semiconductor layer, and the conductive layer is positioned over the first insulating layer. The metal oxide layer is positioned between the first insulating layer and the conductive layer, and an end portion of the metal oxide layer is positioned on an inner side than an end portion of the conductive layer. The insulating region is positioned adjacent to the metal oxide layer and positioned between the first insulating layer and the conductive layer. Furthermore, the semiconductor layer includes a first region, a pair of second regions, and a pair of third regions. The first region overlaps with the metal oxide layer and the conductive layer. The second regions are positioned to put the first region sandwiched therebetween and to overlap with the insulating region and the conductive layer. The third regions are positioned to the first region and the pair of second regions sandwiched therebetween and not to overlap with the conductive layer. The third regions preferably include a portion having lower resistance than the first region. The second regions preferably include a portion having higher resistance than the third regions.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Discussed is a method of manufacturing a LCD device, the method including: forming a gate in each of a plurality of pixel areas on a substrate; forming a gate insulator to cover the gate; forming a semiconductor layer on the gate insulator, and forming a photoresist (PR) on the semiconductor layer; doping high-concentration impurities at the semiconductor layer by using the photoresist (PR) as a mask to form an active layer, a source, and a drain; and doping low-concentration impurities at the semiconductor layer by using the photoresist (PR) as the mask to form a lightly doped drain (LDD) between the active layer and the source and between the active layer and the drain.