A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

Described is a thin film transistor which comprises: a dielectric comprising a dielectric material; a first structure adjacent to the dielectric, the first structure comprising a first material; a second structure adjacent to the first structure, the second structure comprising a second material wherein the second material is doped; a second dielectric adjacent to the second structure; a gate comprising a metal adjacent to the second dielectric; a spacer partially adjacent to the gate and the second dielectric; and a contact adjacent to the spacer.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A drive backplane, a manufacturing method thereof, a detection substrate and a detection device. The drive backplane includes: a base plate and multiple drive modules disposed on the base plate. Each drive module includes a reset transistor, a read transistor, an amplifier transistor and a memory capacitor; the reset transistor is connected to the memory capacitor, the memory capacitor is connected to a photosensor, the amplifier transistor is connected to the memory capacitor, and the read transistor is connected to the amplifier transistor; wherein an active layer in the amplifier transistor is made of amorphous silicon or an oxide semiconductor.

A thin film transistor includes a base substrate and an active layer on the base substrate. The active layer includes a source electrode contact part, a drain electrode contact part, and a channel part between the source electrode contact part and the drain electrode contact part. The source electrode contact part and the drain electrode contact part are lightly doped parts. The source electrode contact part includes a first barrier part. The drain electrode contact part includes a second barrier part. Each of the first barrier part and the second barrier part includes a semiconductor material having an acceptor defect or an acceptor-like defect. Each of the source electrode contact part and the drain electrode contact part includes a semiconductor material having a donor defect or a donor-like defect. The first barrier part and the second barrier part are respectively on two sides of the channel part.

A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

A display device that is suitable for increasing its size is provided.

The display device includes first to third wirings, a first transistor, first to third conductive layers, and a first pixel electrode; the first wiring extends in a first direction and intersects with the second and the third wirings; the second and the third wirings each extend in a second direction intersecting with the first direction; a gate of the first transistor is electrically connected to the first wiring; one of a source and a drain of the first transistor is electrically connected to the second wiring through the first to the third conductive layers; the second conductive layer includes a region overlapping with the third wiring; the first conductive layer, the third conductive layer, and the first pixel electrode contain the same material; the first wiring and the second conductive layer contain the same material; the first wiring is supplied with a selection signal; and the second and the third wirings are supplied with different signals.