A transistor device and method of making the same, the transistor device including: a substrate; a word line disposed on the substrate; a gate insulating layer disposed on the word line; a dual-layer semiconductor channel including: a first channel layer disposed on the gate insulating layer; and a second channel layer disposed on the first channel layer, such that the second channel layer contacts side and top surfaces of the first channel layer; and source and drain electrodes electrically coupled to the second channel layer. When a voltage is applied to the word line, the first channel layer has a first electrical resistance and the second channel layer has a second electrical resistance that is different from the first electrical resistance.

A method of manufacturing a low temperature polysilicon thin film includes: forming a buffer layer on a substrate; forming a first silicon layer on the buffer layer; forming a second silicon layer on the first silicon layer, and forming a substrate impurity barrier interface between the first silicon layer and the second silicon layer, wherein the second silicon layer is thicker than the first silicon layer; and annealing the first silicon layer and the second silicon layer to form a polysilicon layer.

Provided are a thin film transistor, a display device, and a thin film transistor manufacturing method, in which variation in characteristics is small. The present invention is provided with: a gate electrode formed on a substrate; a gate insulation film formed so as to cover the gate electrode; a semiconductor layer which is formed on the upper side of the gate insulation film and which includes a polysilicon layer disposed, in a plan view, inside a region defined by the gate electrode; an etching stopper layer disposed on the upper side of the polysilicon layer; and a source electrode and a drain electrode provided on the semiconductor layer so as to be separated from each other, wherein the polysilicon layer has first and second regions which are not covered with the etching stopper layer, and a part of the source electrode exists above the first region and a part of the drain electrode exists above the second region.

A display panel and a manufacturing method thereof are provided. The display panel includes: an array substrate with a first protrusion defined thereon; a color filter substrate disposed opposite to the array substrate; a supporting structure, wherein an end of the supporting structure is connected to a lateral side of the color filter substrate, another end of the supporting structure is connected to a lateral side of the array substrate, and the first protrusion is embedded into the supporting structure. The first protrusion is formed on a side of the array substrate near the color filter substrate. Therefore, when the supporting structure of the color filter substrate is aligned and attached to the array substrate, the first protrusion can be embedded into the supporting structure, thereby preventing the supporting structure from being moved. Thus, risk of alignment error is reduced, and abnormality of the display panel is prevented.

A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.

A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

A method, apparatus, and system for protection from hazards of conductivity is disclosed using non-electrical means to disrupt electrical current with a thermovolumetric substance. The purpose of this invention is to prevent hazardous conditions from occurring by disrupting the flow of electrical current prior to the development of arc fault conditions.

A thin film transistor, an array substrate, a display device and a method for manufacturing a thin film transistor are provided. The thin film transistor is formed on a base substrate and includes a source; a drain; and a semiconductor active layer having an amorphous silicon layer and one polysilicon portion or a plurality of polysilicon portions, the amorphous silicon layer being contacted with the one polysilicon portion or the plurality of polysilicon portions. The method includes a process of forming a source, a drain, and a semiconductor active layer: wherein forming a semiconductor active layer comprises: forming a first amorphous silicon thin film on a base substrate; and performing a crystallization treatment to the first amorphous silicon thin film to convert a part of the amorphous silicon in the first amorphous silicon thin film into polysilicon, such that a semiconductor active layer comprising one polysilicon portion or a plurality of polysilicon portions are formed.

The present disclosure provides an array substrate, a manufacturing method thereof, a flexible display panel, and a display device, all for achieving a frame-free full-screen flexible display product. The array substrate provided in the present disclosure comprises a flexible base substrate, a thin film transistor on a first surface of the flexible base substrate, and a wiring terminal for transmitting a signal to an electrode of the thin film transistor on a second surface of the flexible base substrate opposite to the first surface. The electrode of the thin film transistor is electrically connected to the wiring terminal through a via hole penetrating the flexible base substrate.

An active device substrate includes a substrate, a first active device, and a second active device. The first active device includes a first gate, a crystallized metal oxide layer, a first insulation layer, a first source, and a first drain. The crystallized metal oxide layer is located on the first gate. The first insulation layer is sandwiched between the crystallized metal oxide layer and the first gate. An area from the top surface of the crystallized metal oxide layer to the bottom surface of the crystallized metal oxide layer is observed via a selected area diffraction mode of a transmission electron microscope, and a diffraction pattern of a crystallized phase can be observed. The second active device includes a second gate, a silicon semiconductor layer, a second source, and a second drain. A manufacturing method of an active device substrate is further provided.