A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

A conductive plate has a front surface at a front side and a rear surface at a rear side. The front surface includes a first front surface on which a first arrangement region is disposed and a second front surface on which a second arrangement region is disposed. The first front surface has a height measured from the rear surface that is different from a height of the second front surface measured from the rear surface. Next, first and second bonding materials are respectively applied to the first and second arrangement regions. A first part is bonded to the first arrangement region via the first bonding material, and a second part is bonded to the second arrangement region via the second bonding material. The heights of the first and second arrangement regions set on the front surface on the conductive plate are different from each other.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

Provided relates to a method for manufacturing an anisotropic conductive adhesive and a method for mounting a component using an anisotropic conductive adhesive, and provides a method for manufacturing an anisotropic conductive adhesive, including: a process of removing a first oxide film on solder particles by using a first reducing agent; and a process of manufacturing an anisotropic conductive adhesive by mixing the solder particles, a gapper, and an adhesive resin.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 6.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

A liquid alloy thermal paste comprises: a liquid alloy and a trace element, the liquid alloy and the trace element are stirred and reformed to a paste-like liquid alloy mixture that is viscous and does not flow easily, and the liquid alloy mixture is used as the liquid alloy thermal paste.

A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.