H01L2224/29364

Manufacturing method for semiconductor device
11676936 · 2023-06-13 · ·

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

Manufacturing method for semiconductor device
11676936 · 2023-06-13 · ·

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

ANISOTROPIC CONDUCTIVE FILM AND CONNECTION STRUCTURE
20170309590 · 2017-10-26 · ·

An anisotropic conductive film whereby electrically conductive particles can be sufficiently captured at each connection terminal while suppressing the occurrence of shorts and conduction reliability can be improved even in cases where connecting finely pitched connection terminals. The anisotropic conductive film has a structure in which electrically conductive particle units in which electrically conductive particles are arranged in a row, or electrically conductive particle units in which electrically conductive particles are arranged in a row and independent electrically conductive particles are disposed in a lattice form in an electrically insulating adhesive layer. The shortest distance La between electrically conductive particles selected from adjacent electrically conductive particle units and the independent electrically conductive particles is not less than 0.5 times the particle diameter of the electrically conductive particles and.

ANISOTROPIC CONDUCTIVE FILM AND CONNECTION STRUCTURE
20170309590 · 2017-10-26 · ·

An anisotropic conductive film whereby electrically conductive particles can be sufficiently captured at each connection terminal while suppressing the occurrence of shorts and conduction reliability can be improved even in cases where connecting finely pitched connection terminals. The anisotropic conductive film has a structure in which electrically conductive particle units in which electrically conductive particles are arranged in a row, or electrically conductive particle units in which electrically conductive particles are arranged in a row and independent electrically conductive particles are disposed in a lattice form in an electrically insulating adhesive layer. The shortest distance La between electrically conductive particles selected from adjacent electrically conductive particle units and the independent electrically conductive particles is not less than 0.5 times the particle diameter of the electrically conductive particles and.

DIE AND SUBSTRATE ASSEMBLY WITH GRADED DENSITY BONDING LAYER

A die and substrate assembly is disclosed for a die with electronic circuitry and a substrate. A sintered bonding layer of sintered metal is disposed between the die and the substrate. The sintered bonding layer includes a plurality of zones having different sintered metal densities. The plurality of zones are distributed along one or more horizontal axes of the sintered bonding layer, along one or more vertical axes of the sintered bonding layer or along both one or more horizontal and one or more vertical axes of the sintered bonding layer.

DIE AND SUBSTRATE ASSEMBLY WITH GRADED DENSITY BONDING LAYER

A die and substrate assembly is disclosed for a die with electronic circuitry and a substrate. A sintered bonding layer of sintered metal is disposed between the die and the substrate. The sintered bonding layer includes a plurality of zones having different sintered metal densities. The plurality of zones are distributed along one or more horizontal axes of the sintered bonding layer, along one or more vertical axes of the sintered bonding layer or along both one or more horizontal and one or more vertical axes of the sintered bonding layer.

METAL SINTERING PREPARATION AND THE USE THEREOF FOR THE CONNECTING OF COMPONENTS

A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm.sup.−1.

METAL SINTERING PREPARATION AND THE USE THEREOF FOR THE CONNECTING OF COMPONENTS

A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm.sup.−1.

ANISOTROPIC CONDUCTIVE FILM AND CONNECTION STRUCTURE
20170278820 · 2017-09-28 · ·

An anisotropic conductive film including an electrically insulating adhesive layer, and electrically conductive particles disposed on the electrically insulating adhesive layer. In such an anisotropic conductive film, the electrically conductive particles are disposed in a lattice by being arranged in first direction rows and second direction rows, and narrow and wide intervals are provided between neighboring rows in at least one of the direction rows. As a result, opposing terminals are stably connected using the anisotropic conductive film, inspection after the connecting is more easily performed, and the number of electrically conductive particles not involved in the connection are reduced and, thereby, the manufacturing cost of the anisotropic conductive film is reduced, even in FOG connections or the like with finer bump pitches.

ANISOTROPIC CONDUCTIVE FILM AND CONNECTION STRUCTURE
20170278820 · 2017-09-28 · ·

An anisotropic conductive film including an electrically insulating adhesive layer, and electrically conductive particles disposed on the electrically insulating adhesive layer. In such an anisotropic conductive film, the electrically conductive particles are disposed in a lattice by being arranged in first direction rows and second direction rows, and narrow and wide intervals are provided between neighboring rows in at least one of the direction rows. As a result, opposing terminals are stably connected using the anisotropic conductive film, inspection after the connecting is more easily performed, and the number of electrically conductive particles not involved in the connection are reduced and, thereby, the manufacturing cost of the anisotropic conductive film is reduced, even in FOG connections or the like with finer bump pitches.