A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.

A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.

A method for closing openings in a flexible diaphragm of a MEMS element. The method includes: providing at least one opening in the flexible diaphragm, situating sealing material in the area of the at least one opening, melting-on at least the applied sealing material in the area of the at least one opening, and subsequently cooling the melted-on material to close the at least one opening.

The application describes MEMS transducer structures comprising a membrane structure having a flexible membrane layer and at least one electrode layer. The electrode layer is spaced from the flexible membrane layer such that at least one air volume extends between the material of the electrode layer and the membrane layer. The electrode layer is supported relative to the flexible membrane by means of a support structure which extends between the first electrode layer and the flexible membrane layer.

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

The present invention relates to a method for manufacturing a membrane component with a membrane made of a thin film (<1 μm, thin-film membrane). The membrane component can be used in microelectromechanical systems (MEMS). The invention is intended to provide a method for manufacturing a membrane component, the membrane being manufacturable with high-precision membrane dimensions and a freely selectable membrane geometry. This is achieved by a method comprising . . . providing a semiconductor wafer (100) with a first layer (116), a second layer (118) and a third layer (126). Depositing (12) a first masking layer (112) on the first layer (116), the first masking layer (112) defining a first selectively processable area (114) for determining a geometry of the membrane (M.sub.1). Forming (13) a first recess (120) by anisotropic etching (13) of the first layer (116) and removing the first masking layer (112). Introducing (14) a material (122) in the first recess (120) and depositing (15) a membrane layer (124) on the first layer (116) with the introduced material (122). Depositing on the third layer (126) a second masking layer that defines a second selectively processable area. Forming a second recess by anisotropic etching of the third layer (126) and of the second layer (118) up to the first layer (116). Removing the second masking layer; and isotropically etching (18) the first layer (116), the isotropic etching being limited by the membrane layer (124) and by the introduced material (122), so that the membrane (M.sub.1) will be exposed.

A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

A process for manufacturing a diaphragm unit of a MEMS transducer that includes multiple piezoelectric transducer units, each of the multiple piezoelectric transducer units including at least one electrode layer and at least one piezoelectric layer formed on a carrier includes the step of removing the transducer units from the carrier. At least one of the transducer units that has been removed from the carrier is arranged on a diaphragm and connected to the diaphragm. Moreover, a diaphragm unit made according to the process includes a diaphragm and multiple piezoelectric transducer units arranged on and connected to the diaphragm. Each of the multiple piezoelectric transducer units includes at least one electrode layer and at least one piezoelectric layer formed on a carrier.

A method for manufacturing a microelectromechanical systems microphone comprises depositing a membrane on a first sacrificial layer on a substrate, releasing the membrane by removing the first sacrificial layer, depositing a resist layer on the membrane, and patterning the resist layer to expose the membrane, such that at least one section of resist layer remains at at least one edge of the membrane to form an anchor. A microphone manufactured by this method is also provided. There is also provided a method for manufacturing a microelectromechanical systems microphone comprising depositing a membrane on a first sacrificial layer deposited on a substrate, releasing the membrane by removing at least the first sacrificial layer, depositing a resist layer on membrane, patterning the resist layer to expose an edge of the membrane, and forming an anchor at the exposed edge of the membrane. A microphone manufactured by this method is also provided.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) device in which a slit at a movable mass of the MEMS device has a top notch slit profile. The MEMS device may, for example, be a speaker, an actuator, or the like. The slit extends through the movable mass, from top to bottom, and has a width that is uniform, or substantially uniform, from the bottom of the movable mass to proximate the top of movable mass. Further, in accordance with the top notch slit profile, top corner portions of the MEMS substrate in the slit are notched, such that a width of the slit bulges at the top of the movable mass. The top notch slit profile may, for example, increase the process window for removing an adhesive from the slit while forming the MEMS device.