Patent classifications
B81C1/00182
MEMS PRESSURE SENSOR BUILT USING THE BEOL METAL LAYERS OF A SOLID-STATE SEMICONDUCTOR PROCESS
A MEMS pressure sensor is provided having a membrane made with one of plurality of metal layers. A lid is positioned above the membrane and connected to a plurality of cavity walls at distal ends of the membrane. The lid includes an array of holes positioned on a region of the lid. A fixed metal electrode is positioned below the lid.
MEMS pressure sensor
The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps to form a differential pressure sensor.
MEMS DEVICES AND PROCESSES
The application describes MEMS transducer having a flexible membrane and which seeks to alleviate and/or redistribute stresses within the membrane layer. A membrane having a first/active region and a second/inactive region is described.
MICROFABRICATED FLUID PUMP
A microfabricated fluid pump is formed in a multilayer substrate by etching a plurality of shallow and deep wells into the layers, and then joining these wells with voids formed by anisotropic etching. The voids define a flexible membrane over the substrate which deforms when a force is applied. The force may be provided by an embedded layer of piezoelectric material. Embedded strain gauges may allow self-sensing and convenient, precise operational control.
Fused quartz dual shell resonator and method of fabrication
A dual-shell architecture and methods of fabrication of fused quartz resonators is disclosed. The architecture may include two encapsulated and concentric cavities using plasma-activated wafer bonding followed by the high-temperature glassblowing. The dual-shell architecture can provide a protective shield as well as a “fixed-fixed” anchor for the sensing element of the resonators. Structures can be instrumented to operate as a resonator, a gyroscope, or other vibratory sensor and for precision operation in a harsh environment. Methods for fabricating a dual-shell resonator structure can include pre-etching cavities on a cap wafer, pre-etching cavities on a device wafer, bonding the device wafer to a substrate wafer to form a substrate pair and aligning and bonding the cap wafer to the substrate pair to form a wafer stack with aligned cavities including a cap cavity and a device cavity. The wafer stack may be glassblown to form a dual-shell structure.
Molecule Sensor Component and Method for Manufacturing Same
A method for manufacturing a component and a component are provided for sensing a molecule. The method includes controlling a temperature during a reaction of two gases that react to produce a crystalline film spanning at least a cross-sectional area of a nanoaperture defined by a substrate among an array of nanoapertures aligned with crater structures defined by the substrate. A unique chemical vapor deposition (CVD) method that introduces a first gas and a second gas allows for formation of the crystalline film. When used in a molecule sensor, the component enables a user to record double-stranded DNA (dsDNA) translocations at unprecedented high (e.g., 1 MHz) bandwidths. The method for manufacturing the component enables development of applications requiring single-layer membranes built at- scale and enables high throughput 2-dimensional (2D) nanofluidics and nanopore studies.
SEMICONDUCTOR DEVICES HAVING A MEMBRANE LAYER WITH SMOOTH STRESS-RELIEVING CORRUGATIONS AND METHODS OF FABRICATION THEREOF
In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer are removed.
MEMS MICROPHONE AND METHOD OF MANUFACTURING THE SAME
A MEMS microphone includes a substrate having a cavity, a diaphragm disposed above the substrate to correspond to the cavity, and a back plate disposed above the diaphragm. The diaphragm includes a concave-convex structure, and the back plate includes a second concave-convex structure corresponding to the concave-convex structure.
Micro fluid actuator
A micro fluid actuator includes an orifice layer, a flow channel layer, a substrate, a chamber layer, a vibration layer, a lower electrode layer, a piezoelectric actuation layer and an upper electrode layer, which are stacked sequentially. An outflow aperture, a plurality of first inflow apertures and a second inflow aperture are formed in the substrate by an etching process. A storage chamber is formed in the chamber layer by the etching process. An outflow opening and an inflow opening are formed in the orifice layer by the etching process. An outflow channel, an inflow channel and a plurality of columnar structures are formed in the flow channel layer by a lithography process. By providing driving power which have different phases to the upper electrode layer and the lower electrode layer, the vibration layer is driven to displace in a reciprocating manner, so as to achieve fluid transportation.
MEMs membrane structure and method of fabricating same
Disclosed is a method of fabricating a MEMS membrane structure. The method comprises: forming a silicon oxide film dam structure on a silicon substrate; depositing an adhesive layer and then forming a sacrificial layer; depositing a surface protective film on the sacrificial layer; etching the surface protective film and the sacrificial layer, thus forming trenches of first to third rows on the silicon oxide film dam structure; depositing a support film inside of the trenches of first to third rows and on the surface protective film of the sacrificial layer, thus forming a membrane; and removing the sacrificial layer disposed inside the support film deposited inside of the trench of first row, thus forming an empty space.