A mirror device manufacturing method includes a forming step of forming a structure by forming a base portion, a movable portion, and a coupling portion coupling the base portion and the movable portion to each other such that the movable portion is able to swing with respect to the base portion through processing of a wafer, and forming a mirror layer in the movable portion; and a collecting step of performing collection of foreign substances from the structure using a collection member after the forming step. A mirror unit manufacturing method includes a sealing step of sealing the mirror device after the collecting step.

The present invention relates to a process and apparatus for the preparation of a bonded substrate. More particularly, the present invention relates to a PDMS bonding apparatus. More specifically, the present invention relates to a PDMS bonding apparatus which uses plasma to bond PDMS to a substrate.

The present invention discloses a PDMS bonding apparatus and process for using said apparatus, the apparatus comprising: a process chamber (100) forming a sealed processing space (S) for bonding of PDMS (polydimethylsiloxane); a first support (200) installed in the process chamber (100) and which supports the PDMS (1); a second support (300) installed in the process chamber (100) opposing the first support (200) and which supports a bonding object (2) which is bonded to the PDMS (1); a gas injection unit (400) which ejects process gas between the first support (200) and the second support (300), and; a plasma generator (500) which creates a plasma atmosphere within the process chamber (100).

An operation method of a semiconductor removing apparatus includes moving a semiconductor structure to a stage, wherein the semiconductor structure includes a lower substrate, a cap, and a micro electro mechanical system (MEMS) structure between the lower substrate and the cap, and the cap has a diced portion; pulling, by a clamp assembly, a tape of a tape roll from a first side of the stage to a second side of the stage opposite to the first side, such that the tape is attached to the cap of the semiconductor structure; and pulling, by the clamp assembly, the tape of the tape roll from the second side of the stage back to the first side of the stage, such that the diced portion of the cap separates from the semiconductor structure.

A fabrication method of transparent material is a method of processing a thermosetting transparent material including a disposing step of disposing an uncured thermosetting transparent material, a laser beam irradiation step of irradiating the disposed uncured thermosetting transparent material with a laser beam so that cavitation bubbles are generated in the uncured thermosetting transparent material, and a curing step of performing a curing process on the uncured thermosetting transparent material in which the cavitation bubbles are generated.

First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

An operation method of a semiconductor removing apparatus includes moving a semiconductor structure to a stage, wherein the semiconductor structure includes a lower substrate, a cap, and a micro electro mechanical system (MEMS) structure between the lower substrate and the cap, and the cap has a diced portion; pulling, by a clamp assembly, a tape of a tape roll from a first side of the stage to a second side of the stage opposite to the first side, such that the tape is attached to the cap of the semiconductor structure; and pulling, by the clamp assembly, the tape of the tape roll from the second side of the stage back to the first side of the stage, such that the diced portion of the cap separates from the semiconductor structure.

A method of manufacturing a microarray substrate having improved reliability and mass-production properties uses a vapor of a surface-reforming material, and includes washing a base substrate, supplying the vapor of the surface-reforming material into a container to which the base substrate is provided, and coupling the vapor of the surface-reforming material to a surface of the base substrate to form a self-assembled monolayer.

A system for fabricating a crystalline film is provided comprising a sputtering chamber that receives placement of a substrate, receives placement of a Tungsten target, and receives configuration of a separation distance between the substrate and the Tungsten target. The system also receives adjustment of chamber pressure, receives selection of a gas mixture ratio, and receives selection of a sputtering power profile. The chamber yields crystalline cluster-free amorphous Tungsten nitride alloy film. The chamber receives placement of the Tungsten target on a sputtering tool. The separation distance is configured to minimize adatom mobility of film produced. The chamber pressure is adjusted within a range of about 30 mTorr to about 5 mTorr, inclusive. The gas mixture ratio is a sputtering gas mixture ratio of Argon to Nitrogen. The sputtering power profile is for the sputtering tool. The power profile is 300 W of alternating current.

An apparatus is provided configured to manufacture an article using a multi-layer/laminated photoresist comprising a plurality of layers of photoresist material, where at least a first layer of photoresist material has a first sensitivity to radiation, and at least a second layer of photoresist material has a different sensitivity to radiation. The apparatus comprises: a. a housing configured to receive the photoresist and locate the photoresist in at least one operational position in the housing; b. an exposure system configured to emit radiation which is incident on the photoresist when in the operational position; wherein: i. the exposure system is configured to emit radiation having a first radiation characteristic to induce a change in one or more properties of the area(s) of the first layer of photoresist material exposed to the radiation; and wherein ii. the first radiation characteristic is configured not to induce a change, or to induce a different change, in one or more properties of at least a different one of the layers of photoresist material. Consequently complex articles can be manufactured including hidden or partially visible features, such as overhangs for example.

Methods of fabricating a damascene template for electrophoretic assembly and transfer of patterned nanoelements are provided which do not require chemical mechanical polishing to achieve a uniform surface area. The methods include conductive layer fabrication using a combination of precision lithography techniques using etching or building up the conductive layer to form raised conductive features separated by an insulating layer of equal height.