Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.

A method for manufacturing a coated item 10 in a chemical deposition reactor and a coated item produced by the method are provided. The method includes deposition of a first coating on a first surface of the item 10, and/or deposition of a second coating on a second surface of the item.

A gas nozzle according to an embodiment of the present invention includes a columnar main body including a ceramic sintered body having a through hole through which gas flows. An outlet of the through hole for the gas is formed on one end face of the main body. An inner wall of the through hole has a first region located in a vicinity of the outlet, and a second region located further inward of the main body than the first region. The first region and the second region each include a sintered surface of the ceramic sintered body. Average crystal grain size in the first region is larger than average crystal grain size in the second region.

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

A method for manufacturing a coated item 10 in a chemical deposition reactor and a coated item produced by said method are provided. The method comprises deposition of a first coating on a first surface of the item 10, and/or deposition of a second coating on a second surface of said item.

An apparatus, a method and a valve with a reactive chemical inlet, a reaction chamber outlet, and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further including an additional cleaning chemical inlet at a downstream side of the closure to purge the closure.

A precursor diffusion device configured to diffuse a growth precursor towards an external growth surface included on an external growth member, the diffusion device including a container including at least one porous element having a porosity configured to allow or prevent the passage of a precursor fluid through a thickness of the porous element, the porous element being configured so that the precursor fluid which passes through the thickness of the porous element generates an aerosol by fragmentation of the precursor fluid, the aerosol being formed of droplets of the precursor fluid. Also, a method for depositing a layer on a growth surface by such a diffusion device.

A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.

A shower plate for a plasma deposition apparatus, the shower plate including: a plurality of apertures each extending from a rear surface of the shower plate to a front surface for passing a carrier gas therethrough in this direction to a chamber, a plurality of first apertures each extending from a first connecting aperture to an inner part of the front surface for passing gas therethrough in this direction to the chamber, and a plurality of second apertures each extending from a second connecting aperture to an outer part of the front surface for passing gas therethrough in this direction to the chamber, wherein the first connecting aperture connects the first apertures to at least one first aperture extending from a sidewall side of the shower plate and the second connecting aperture connects the second apertures to at least one second aperture extending from the sidewall side.

A gas shower head includes a plate, a plurality of central holes disposed in a central region of the plate, and a plurality of peripheral holes disposed in a peripheral region of the plate. The central holes are configured to form a first portion of a material film, and the peripheral holes are configured to form a second portion of the material film. A hole density in the peripheral region is greater than a hole density in the central region. The first portion of the material film includes a first thickness corresponding to the hole density in central region, and the second portion of the material film includes a second thickness corresponding to the hole density in peripheral region and greater than the first thickness.