A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

To provide an electronic component having a protective film formed with good uniformity, over the entire surface thereof. The electronic component has a protective film formed over the entire surface thereof, and the electronic component has elements and wirings formed on a base body. The protective film is formed by a CVD method, over an entire surface of the electronic component, by: arranging an electrode in a chamber; grounding one side of the chamber and the electrode; accommodating the electronic component in the chamber; supplying a raw material gas to the chamber; rotating or swinging the chamber and thereby moving the electronic component in the chamber; supplying high-frequency power to the other side of the chamber and the electrode; and generating a raw-material-gas-based plasma between the electrode and the chamber.

A plasma apparatus configured to form a film on or etch a work piece includes: a vacuum chamber including a first casing that has a first recess and a first flat part disposed around the first recess, and a second casing disposed opposite to the first casing; an insulating member that is disposed between the first flat part of the first casing and the second casing, and is configured to contact with the work piece in a state where the work piece faces a space inside the first recess and is separated from the first flat part; and an electricity application unit that is configured to apply electricity to the work piece, wherein a distance between the first flat part and a contact point between the work piece and the insulating member is shorter than a distance between the work piece and a bottom part of the first recess.

An in-chamber plasma source in a deposition reactor system includes an array of microcavity or microchannel plasma devices having a first electrode and a second electrode isolated from plasma in microcavities or microchannels. An inlet provides connection to deposition precursor. A region interacts deposition precursor with plasma. An outlet directs precursor dissociated with the plasma onto a substrate for deposition. A reactor system includes a substrate holder across from the outlet, a chamber enclosing the in-chamber plasma source and the substrate holder, an exhaust from the chamber, and conduit supplying precursors from sources or bubblers to the inlet. A reactor system can conduct plasma enhanced atomic layer deposition at high pressures and is capable of forming a complete layer in a single cycle.

The invention relates to a pro-biofilm coating applied by means of cold atmospheric plasma polymerization of a precursor on a substrate. The coating has a roughness such that it promotes the creation of more than 100% biofilm on the substrate, where the 100% of biofilm is the one as produced on the same substrate being devoid of said pro-biofilm coating. The invention also relates to a method of producing said pro-biofilm coating and a substrate coated with same.

Systems and methods for producing carbon-based coatings featuring diamond-like carbon (DLC) structures on the internal surfaces of cylindrical or tube-like components is disclosed. The methods feature the use of plasma-enhanced chemical vapor deposition (PECVD) to provide a generally uniform coating on the surface. Longitudinally homogeneous plasma is ignited directly inside the tube-like component. A bipolar pulse with a reverse active plasma step is used. The pressure and bias voltage are selected so as to cause the deposition of a carbon-based coating on the inner surface.

A coating apparatus includes a chamber body having a reaction chamber, a supporting rack, a monomer discharge source and a plasma generation source. The supporting rack has a supporting area for supporting the substrate. The monomer discharge source has a discharge inlet for introducing a coating forming material into the reaction chamber. The plasma generation source is arranged for exciting the coating forming material, wherein the supporting area of the supporting rack is located at a position between the monomer discharge source and the plasma generation source, so that the coating is evenly formed on the surface of the substrate, and the deposition velocity is increased.

A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

Embodiments of systems and methods for RF power distribution in a multi-zone electrode array are described. A system may include a plasma source configured to generate a plasma field. Also, the system may include an RF power source coupled to the plasma source and configured to supply RF power to the plasma source. The system may also include a source controller coupled to the RF power source and configured to control modulation of the RF power supplied to the plasma source to enhance uniformity of a plasma field generated by the plasma source.