Various embodiments include a device for producing structurally modified materials. In some embodiments, the device includes a floating zone furnace which holds a feed rod in contact with seed crystal. One or more laser diodes are then used to heat a portion of the feed rod and cause it to transition to a molten state. A magnetic field is applied to the floating zone to change the underlying crystal structure of the material as it solidifies upon exiting the floating zone. In some instances, the changes may include manipulating the bond angle of the crystal structure or altering the unit cell volume of the crystal. Changes in the crystal structure directly affect the electrical resistivity and/or the magnetization and other physical properties of the crystal.

Various embodiments include a device for producing structurally modified materials. In some embodiments, the device includes a floating zone furnace which holds a feed rod in contact with seed crystal. One or more laser diodes are then used to heat a portion of the feed rod and cause it to transition to a molten state. A magnetic field is applied to the floating zone to change the underlying crystal structure of the material as it solidifies upon exiting the floating zone. In some instances, the changes may include manipulating the bond angle of the crystal structure or altering the unit cell volume of the crystal. Changes in the crystal structure directly affect the electrical resistivity and/or the magnetization and other physical properties of the crystal.

The fabrication of single-crystalline ionically conductive materials and related articles and systems are generally described.

The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of inserting a starting material into a crucible, melting the starting material in the crucible by heating the starting material, arranging a thermal insulation lid at a distance above a melt surface of said melt such that at least a central part of the melt surface is covered by the lid, and growing the bulk single crystal from the melt by controllably cooling the melt with the thermal insulation lid arranged above the melt surface.

The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of inserting a starting material into a crucible, melting the starting material in the crucible by heating the starting material, arranging a thermal insulation lid at a distance above a melt surface of said melt such that at least a central part of the melt surface is covered by the lid, and growing the bulk single crystal from the melt by controllably cooling the melt with the thermal insulation lid arranged above the melt surface.

Disclosed is a lithium complex oxide and method of manufacturing the same, more particularly, a lithium complex oxide effective in improving the characteristics of capacity, resistance, and lifetime with reduced residual lithium and with different interplanar distances of crystalline structure between a primary particle locating in a internal part of secondary particle and a primary particle locating on the surface part of the secondary particle, and a method of preparing the same.

A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

An object of the present invention is to provide ferrite particles having a high magnetic permeability in a frequency band of 1 MHz to 1 GHz. Another object is to provide a resin composition containing the ferrite particles and an electromagnetic wave shielding material composed of the resin composition. The ferrite particles are composed of a single crystalline body having an average particle size of 1 to 2000 nm and has a spherical particle shape, wherein the ferrite particles contain substantially no Zn, 3 to 25 wt % of Mn, and 43 to 65 wt % of Fe, and a real part μ′ of a complex magnetic permeability measured using a molding composed of the ferrite particles and a binder resin has a maximal value in a frequency band of 100 MHz to 1 GHz.

An object of the present invention is to provide ferrite particles having a high magnetic permeability in a frequency band of 1 MHz to 1 GHz. Another object is to provide a resin composition containing the ferrite particles and an electromagnetic wave shielding material composed of the resin composition. The ferrite particles are composed of a single crystalline body having an average particle size of 1 to 2000 nm and has a spherical particle shape, wherein the ferrite particles contain substantially no Zn, 3 to 25 wt % of Mn, and 43 to 65 wt % of Fe, and a real part μ′ of a complex magnetic permeability measured using a molding composed of the ferrite particles and a binder resin has a maximal value in a frequency band of 100 MHz to 1 GHz.