A method for manufacturing epitaxial films with multiple stress states, comprising steps of: providing a first single crystal substrate, and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate, wherein the first epitaxial film is made of a first material;

removing the sacrificial layer to separate the first epitaxial film from the first single crystal substrate; transferring the first epitaxial film to a second single crystal substrate, wherein the second single crystal substrate is made of a second material, a partial surface of the second single crystal substrate being overlapped by the first epitaxial film; applying epitaxies onto the first epitaxial film and the second single crystal substrate to form a second epitaxial film on the first epitaxial film and the second single crystal substrate.

A method for manufacturing epitaxial films with multiple stress states, comprising steps of: providing a first single crystal substrate, and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate, wherein the first epitaxial film is made of a first material;

removing the sacrificial layer to separate the first epitaxial film from the first single crystal substrate; transferring the first epitaxial film to a second single crystal substrate, wherein the second single crystal substrate is made of a second material, a partial surface of the second single crystal substrate being overlapped by the first epitaxial film; applying epitaxies onto the first epitaxial film and the second single crystal substrate to form a second epitaxial film on the first epitaxial film and the second single crystal substrate.

Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

A method for producing a product including an oxide film of a second metal that is doped with a first metal includes generating a mist from a raw material solution in which both the first metal and the second metal are dissolved, and supplying the mist to a surface of a substrate to form the oxide film on the surface of the substrate. A pH of the raw material solution is less than 7.

Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.

Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.

The present invention provides a method for manufacturing an epitaxial film and the epitaxial film thereof. The method comprises the steps of: providing a first single crystal substrate and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate; removing the sacrificial layer in order to separate the first epitaxial film from the first single crystal substrate; shifting the first epitaxial film to a second single crystal substrate so as to let the first epitaxial film cover on a partial surface of the second single crystal substrate, wherein the first epitaxial film and the second single crystal substrate are two different crystallographic plane orientations in absolute coordinates; and forming a second epitaxial film on the first epitaxial film and the second single crystal substrate, so as to let the second epitaxial film has at least two crystallographic plane orientations.

Provided is a method for producing a crystal body that can obtain a crystal body having a relatively large size and a more uniform composition, and a novel single crystalline phosphor obtained by the above producing method. The single crystalline phosphor contains YAG or LuAG as a main component and at least one element of Ce, Pr, Sm, Eu, Tb, Dy, Tm, and Yb as an accessory component. In a cross section of the single crystalline phosphor, a uniform concentration region in which the accessory component is uniformly distributed is located in a central portion of the cross section, and an area ratio of the uniform concentration region to a cross-sectional area of the cross section is 35% or more.

A method of forming a single phase compositionally complex material including a plurality of transition metals is provided. The method includes creating a magnetic phase diagram to predict magnetic behavior, by calculating expected magnetic states and calculating the spin structure factor by Fourier transform; calculating the spin structure factor by Fourier transform; obtaining a transition temperature from the spin structure factor; selecting the plurality of transition metals and corresponding transition metal composition ratios for the material based on a desired magnetic behavior and the calculated spin structure factor; and forming the material that is a compositionally complex transition metal oxide comprising the plurality of transition metals at the selected composition ratios. The material may be a compositionally complex ABO.sub.3 perovskite film in which A is La and B is the plurality of transition metals including Cr, Mn, Fe, Co, and Ni.