Mn—Zn ferrite particles according to the present invention contain 44-60% by mass of Fe, 10-16% by mass of Mn and 1-11% by mass of Zn. The ferrite particles are single crystal bodies having an average particle diameter of 1-2,000 nm, and have polyhedral particle shapes, while having an average sphericity of 0.85 or more but less than 0.95.

A RAMO.sub.4 substrate includes a single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO.sub.4 substrate. An unevenness having a height of 500 nm or more is not provided on the epitaxially-grown surface.

A RAMO.sub.4 substrate is formed from single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO.sub.4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

A RAMO.sub.4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO.sub.4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO.sub.4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO.sub.4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

A RAMO.sub.4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO.sub.4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO.sub.4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO.sub.4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

Magnetoelectric heterostructures, and related articles, systems, and methods, are generally described.

Alumina is generally used as an inorganic filler, while spinel, which is known to be lower in thermal conductivity than alumina, is used in applications such as gems, fluorescence emitters, catalyst carriers, adsorbents, photocatalysts and heat-resistant insulating materials, but not expected to be used as a thermally conductive inorganic filler. Thus, an object of the invention is to provide spinel particles having excellent thermal conductive properties. The invention relates to a spinel particle including magnesium, aluminum and oxygen atoms and molybdenum and having a [111] plane crystallite diameter of 220 nm or more.

A ceramic product includes a transparent ceramic panel having a non-planar geometry including a bend having a slippage plane, an increased haze, a non-uniform thickness, or a combination thereof. A method includes providing a transparent ceramic panel, heating the panel, bending the panel to conform to a non-planar geometry.

A ceramic product includes a transparent ceramic panel having a non-planar geometry including a bend having a slippage plane, an increased haze, a non-uniform thickness, or a combination thereof. A method includes providing a transparent ceramic panel, heating the panel, bending the panel to conform to a non-planar geometry.