C30B29/32

RRAM Materials and Devices
20230048493 · 2023-02-16 ·

Methods for the manufacture of stable strontium titanate nanocube sols are disclosed. The sols are useful in the manufacture of switchable layers suitable for RRAM applications and the switching performance is stable and reproducible. The RRAM layers comprise a mixture of strontium titanate nanocubes and surfactant.

Systems and methods for integrating a-axis oriented barium titanate thin films on silicon (001) via strain control

Various embodiments of the present technology enable growth of a-axis oriented barium titanate (BTO) films by inserting a relaxed strain control layer having a larger lattice constant than the c-axis of BTO and a similar thermal expansion mismatch. As a result, in-plane tensile stress causes BTO to grow with its ferroelectric polarization in-plane. Some embodiments allow for BTO films to immediately be grown on silicon with a-axis orientation, and without the need to create thick layers for relaxation. Using various embodiments of the present technology, the BTO can be grown in-plane with minimal dislocation density that is confined to the interface region.

Systems and methods for integrating a-axis oriented barium titanate thin films on silicon (001) via strain control

Various embodiments of the present technology enable growth of a-axis oriented barium titanate (BTO) films by inserting a relaxed strain control layer having a larger lattice constant than the c-axis of BTO and a similar thermal expansion mismatch. As a result, in-plane tensile stress causes BTO to grow with its ferroelectric polarization in-plane. Some embodiments allow for BTO films to immediately be grown on silicon with a-axis orientation, and without the need to create thick layers for relaxation. Using various embodiments of the present technology, the BTO can be grown in-plane with minimal dislocation density that is confined to the interface region.

Apparatuses and methods for actuation of optical elements

An apparatus having an asymmetric adjustable lens with a deformable optical element. The apparatus may also include one or more actuators coupled to a deformable element of the asymmetric adjustable lens in a direct-drive configuration such that (1) mechanical action of the one or more actuators applies force to the deformable optical element and (2) the force applied by the mechanical action of the one or more actuators changes an optical property of the asymmetric adjustable lens by deforming the deformable optical element. Various other devices, systems, and methods are also disclosed.

Method for preparing large size Beta-type Ammonium tetramolybdate monocrystal particle

A method for preparing large size beta-type ammonium tetramolybdate monocrystal particle includes industrial ammonium molybdate, ammonia, de-ionized water are used to prepare ammonium molybdate solution with concentration of 0.2˜0.6 g/ml; pH is adjusted to 5˜7, temperature is adjusted to the first temperature of 70˜90° C. to obtain the first ammonium molybdate solution; beta-type ammonium tetramolybdate crystal seed is put into crystallization container, and the first ammonium molybdate solution is poured in the crystallization container, to form crystallization system; the crystallization system stands still at room temperature, naturally cooling, the beta-type ammonium tetramolybdate crystal seed grows into large size beta-type ammonium tetramolybdate monocrystal particle. A beta-type ammonium tetramolybdate crystal seed is obtained by constant-temperature crystallization at 70˜90° C. The obtained beta-type ammonium tetramolybdate crystal seed is put stewing in the first ammonium molybdate solution and is naturally cooling to produce large size beta-type ammonium tetramolybdate monocrystal particle forms.

Crystallization of amorphous multicomponent ionic compounds

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

Crystallization of amorphous multicomponent ionic compounds

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR EPITAXIAL GROWTH OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL
20220364266 · 2022-11-17 ·

A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO.sub.3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR EPITAXIAL GROWTH OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL
20220364266 · 2022-11-17 ·

A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO.sub.3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

ELECTROMECHANICAL RESPONSIVE FILM, STACKED ARRANGEMENT AND METHODS OF FORMING THE SAME
20220367787 · 2022-11-17 ·

Various embodiments may provide an electromechanical responsive film. The electromechanical responsive film may include a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O). The composition may have a formula (Na.sub.xK.sub.y)NbO.sub.3-δ, wherein 0≤x<1, wherein 0≤y<1, and wherein 0<x+y<1. The composition may satisfy at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1.