Dynamic thin film interferometry is a technique used to non-invasively characterize the thickness of thin liquid films that are evolving in both space and time. Recovering the underlying thickness from the captured interferograms, unconditionally and automatically is still an open problem. A compact setup is provided employing a snapshot hyperspectral camera and the related algorithms for the automated determination of thickness profiles of dynamic thin liquid films. The technique is shown to recover film thickness profiles to within 100 nm of accuracy as compared to those profiles reconstructed through the manual color matching process. Characteristics and advantages of hyperspectral interferometry are discussed including the increased robustness against imaging noise as well as the ability to perform thickness reconstruction without considering the absolute light intensity information.

A thickness estimating apparatus includes a transfer robot, a light source, a camera, a memory and a controller. The memory stores a thickness predicting model generated based on a data set including a thickness of at least one of a test wafer corresponding to the wafer or a test element layer formed on the test wafer, and the thickness predicting model being trained to minimize a loss function of the data set. The controller applies pixel data, which is acquired from at least one pixel selected from a plurality of pixels included in a captured image, to the thickness predicting model, to predict a thickness of at least one of the wafer or an element layer formed on the wafer in a position corresponding to a position of the selected pixel.

Methods and systems disclosed herein can measure thin film stacks, such as film on grating and bandgap on grating in semiconductors. For example, the thin film stack may be a 1D film stack, a 2D film on grating, or a 3D film on grating. One or more effective medium dispersion models are created for the film stack. Each effective medium dispersion model can substitute for one or more layers. A thickness of one or more layers can be determined using the effective medium dispersion based scatterometry model. In an instance, three effective medium dispersion based scatterometry models are developed and used to determine thickness of three layers in a film stack.

There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.

A test system for examining a hollow body, in particular a cylinder bore in an engine block, comprises a measuring apparatus comprising an elongate body and a plurality of sensors which are connected to the body and are set up to carry out a distance measurement. The test system also comprises electronic control means which are set up to move the measuring apparatus into a hollow body to be examined and to determine an internal diameter of the hollow body on the basis of distance measurement data from the sensors. In order to examine hollow bodies of different diameters, at least some of the sensors are in the form of movable sensors which can be moved relative to the elongate body of the measuring apparatus. The electronic control means are also set up to select a measuring position of the movable sensors relative to the elongate body on the basis of a hollow body to be examined. A calibration station is provided and the electronic control means are set up to carry out a calibration process for the movable sensors. A corresponding method is also disclosed.

A light interference system is provided. The light interference system includes a light source configured to generate a measurement light; a fiber configured to propagate therethrough the measurement light; and a measurement device. The fiber includes a single-mode fiber, a multimode fiber and a connector connecting the single-mode fiber and the multimode fiber. A tip end of the fiber is formed of the multimode fiber, and an end surface of the tip end of the fiber is configured to emit the measurement light to a measurement target object and receive a reflection light from the measurement target object. The measurement device is configured to measure physical property of the measurement target object based on the reflection light.

First, it is judged whether the diamond film is the single-crystal diamond film or the polycrystalline diamond film according to ellipsometric spectrum data and absorption spectrum data, and different calculation methods are selected to obtain the optical constants and the thickness of the diamond film according to spectral data (e.g., the ellipsometric spectrum data and the absorption spectrum data). Additionally, in the single-crystal diamond film, the optical constants and the thickness of the diamond film are obtained through calculation using the Cauchy model. In the polycrystalline diamond film, the spectral region is selected, and the optical constants and the thickness of the diamond film are obtained through calculation according to the oscillator model and the evaluation function MSE.

A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.

A method for measuring a surface of an object including at least one structure using low coherence optical interferometry, the method including the steps of acquiring an interferometric signal at a plurality of measurement points in a field of view and, for at least one measurement point, attributing the interferometric signal acquired to a class of interferometric signals from a plurality of classes, each of the classes being associated with a reference interferometric signal representative of a typical structure; and analysing the interferometric signal to derive therefrom an item of information on the structure at the measurement point, as a function of its class.

A system and methods for OCD metrology are provided including receiving reference parameters, receiving multiple sets of measured scatterometric data, and receiving an optical model designed to generate one or more sets of model scatterometric data according to a set of pattern parameters, and training a machine learning model by applying, during the training, target features including the reference parameters, and by applying input features including the sets of measured scatterometric data and the sets of model scatterometric data, such that the trained machine learning model estimates new wafer pattern parameters from subsequently sets of measured scatterometric data.