G01B11/0633

BUMP MEASUREMENT HEIGHT METROLOGY
20230228559 · 2023-07-20 · ·

A method for measuring height differences between tops of multiple bumps of an upper surface of a layer, the method may include performing first measurements of the height differences between the bumps and the corresponding areas, by illuminating the bumps and the corresponding areas with first radiation; wherein the first measurements are subjected to first measurement errors; and determining the height differences between the bumps and the corresponding areas based on the first measurements and the first measurements errors.

SYSTEM AND METHOD TO MAP THICKNESS VARIATIONS OF SUBSTRATES INMANUFACTURING SYSTEMS

Implementations disclosed describe, among other things, a system and a method of scanning a substrate with a beam of light and detecting for each of a set of locations of the substrate, a respective one of a set of intensity values associated with a beam of light reflected from (or transmitted through) the substrate. The detected intensity values are used to determine a profile of a thickness of the substrate.

METHODS AND SYSTEMS TO MEASURE PROPERTIES OF MOVING PRODUCTS IN DEVICE MANUFACTURING MACHINES
20230213444 · 2023-07-06 ·

Described are systems and techniques directed to optical inspection of moving products (wafers, substrates, films, patterns) that are being transported to or from processing chambers in device manufacturing systems. Implementations include a system that has a first source of light to direct a first light to a first location on a surface of a product. The first light generates, at the first location, a first reflected light. The system further includes a first optical sensor to generate a first data representative of a first reflected light, and a processing device, in communication with the first optical sensor to determine, using the first data, a property of the product.

APPARATUS FOR CHARACTERIZATION OF GRAPHENE OXIDE COATINGS
20230213332 · 2023-07-06 ·

An apparatus for measuring the thickness of graphene oxide coatings deposited on a support substrate are described. The apparatus includes a light source and a photodetector which can be placed directly into a coating line to provide continuous feedback on the thickness of a fabricated graphene oxide coating, enabling fabrication of controlled thickness coatings and real-time quality monitoring.

Method for inspection of a target object, control system and inspection system

A method for inspection of a target object, the method including irradiating a reference surface having a non-flat reference profile with radiation; determining reference response data based on detected radiation having interacted with the reference surface; irradiating a target object with radiation, the target object including a target surface having a non-flat target profile corresponding to the reference profile; determining inspection response data based on detected radiation having interacted with the target object; and determining at least one parameter of the target object based on the reference response data and the inspection response data. An alternative method; a control system for controlling an emitter system and a detector system; and an inspection system including a control system, an emitter system and a detector system, are also provided.

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
20220406667 · 2022-12-22 ·

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

OPTICAL MONITORING DEVICE AND METHOD FOR CONTROLLING COATING THICKNESSES
20220403504 · 2022-12-22 ·

The disclosure relates to a device and method for coating thickness monitoring. The device comprises one or more lasers with different wavelengths, a light splitting optical element for beam splitting and beam combining of laser lights with different wavelengths, a diffuse plate, a driving motor, a lens, a multimode optical fiber, a light power meter, a test substrate and a coating fixture. The laser light is converted into partially coherent light through the rotating diffuse plate driven by a driving motor. The partially coherent light enters a multimode optical fiber through lens focusing, and is transmitted to a coating machine, collimated by a lens and then incident to a test substrate. The transmitted light enters a second multimode optical fiber after being focused by a lens, and is collimated and split at an optical fiber outlet. The light power meter is used for respectively measuring the power of the exiting light with different wavelengths and monitoring the transmissivities of lights with different wavelengths on the test substrate to realize the control of the coating thickness. The coating thickness monitoring device has the characteristics of simple structure, convenience in mounting, and narrow linewidth of the monitoring light source, and can realize the thickness control in a high-precision optical interference filter coating procedure.

FILM THICKNESS MEASURING DEVICE AND FILM THICKNESS MEASURING METHOD

A film thickness measuring apparatus includes a light irradiation unit configured to irradiate an object with light in a planar shape, an optical element having a transmittance and a reflectance changing according to wavelengths in a predetermined wavelength range, the optical element being configured to separate light from the object by transmitting and reflecting the light, an imaging unit configured to photograph light separated by the optical element, and an analysis unit configured to estimate a film thickness of the object based on a signal from the imaging unit photographing light, in which the light irradiation unit emits light having a wavelength included in the predetermined wavelength range of the optical element.

Device and method for determining a property of a sample that is to be used in a charged particle microscope

The invention relates to a device and method for determining a property of a sample that is to be used in a charged particle microscope. The sample comprises a specimen embedded within a matrix layer. The device comprises a light source arranged for directing a beam of light towards said sample, and a detector arranged for detecting light emitted from said sample in response to said beam of light being incident on said sample. Finally, the device comprises a controller that is connected to said detector and arranged for determining a property of said matrix layer based on signals received by said detector.

Methods and systems to measure properties of products on a moving blade in electronic device manufacturing machines

Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.