Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S1) of introducing a reactive gas having a deposit property to a processing chamber and forming a deposit layer over the surface of a pattern to be etched of a substrate to be etched, the etching process (S2) of removing a reaction product of the deposit layer and the surface of the pattern to be etched, and a monitoring process (S3) of irradiating light to the pattern to be etched at the time of the depo process of cycle etching for executing two processes alternately and working a fine pattern and monitoring a change amount of the film thickness of the deposit layer by change of a coherent light having a specific wavelength reflected by the pattern to be etched, the depo process being for forming the deposit layer, in which a processing condition of processes for forming the deposit layer of the next cycle and onward of cycle etching is determined so that an indicator of the depo film thickness calculated from the change amount of the film thickness of the deposit layer monitored falls in a predetermined range compared to reference data.

An optical metrology model for in-line thickness measurements of a film overlying non-ideal structures on a substrate is generated by performing pre-measurements prior to deposition of the film and performing post-measurements after the deposition. The pre- and post-measurements are performed at at least one of multiple polarization angles or multiple orientations of the substrate. Differences in reflectance between the pre- and post-measurements are determined at the multiple polarization angles and the multiple orientations. At least one of the multiple polarization angles or the multiple orientations are identified where the differences in reflectance are indicative of a suppressed influence from the non-ideal structures. The optical metrology model is generated using the identified polarization angles and the identified orientations as inputs to a machine-learning algorithm.

Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

An optical scanning system includes a radiating source capable of outputting a source light beam, a de-scan lens that is configured to output a de-scanned light beam, the de-scan lens is located approximately one focal length of the de-scan lens from an sample irradiation location, a focusing lens that is configured to output a focused light beam, a first non-polarizing beam splitter configured to be irradiated by at least a portion of the focused light beam, a second non-polarizing beam splitter configured to be irradiated by at least a portion of the focused light beam that is reflected by the first non-polarizing beam splitter, and a detector that is located at approximately one focal length of the focusing lens from the focusing lens, the detector is configured to be irradiated by at least a portion of the focused light beam that is not reflected by the second non-polarizing beam splitter.

The present disclosure is generally directed to methods and systems for measuring the thickness of coatings or thin films on various substrates. For example, one disclosed method includes the steps of providing and directing light waves of varying wavelengths toward a moving substrate comprising a coating, linearly polarizing the light waves, converting the linearly polarized light waves to circularly polarized light waves, analyzing elliptically polarized light waves reflected by the moving substrate, capturing analyzed light waves, generating light wave data based on the captured light waves, and determining a thickness of the coating based on the light wave data.

Methods and systems for achieving a small measurement box size specification across a set of metrology system parameters are presented. The small measurement box size specification is achieved by selectively constraining one or more of the sets of system parameters during measurement. A subset of measurement system parameters such as illumination wavelength, polarization state, polar angle of incidence, and azimuth angle of incidence is selected for measurement to maintain a smaller measurement box size than would otherwise be achievable if the full, available range of measurement system parameters were utilized in the measurement. In this manner, control of one or more factors that affect measurement box size is realized by constraining the measurement system parameter space. In addition, a subset of measurement signals may be selected to maintain a smaller measurement box size than would otherwise be achievable if all available measurement signals were utilized in the measurement.

The present disclosure is generally directed to methods and systems for measuring the thickness of coatings or thin films on various substrates. For example, one disclosed method includes the steps of providing and directing light waves of varying wavelengths toward a moving substrate comprising a coating, linearly polarizing the light waves, converting the linearly polarized light waves to circularly polarized light waves, analyzing elliptically polarized light waves reflected by the moving substrate, capturing analyzed light waves, generating light wave data based on the captured light waves, and determining a thickness of the coating based on the light wave data.

Described herein are devices and techniques for measuring a thickness of a surface layer. A device can include a detector, a processor, and a memory. The detector can be arranged to receive reflected light from a surface of a sample. The processor can be in electrical communication with the detector. The memory can store instructions that, when executed by the processor, can cause the processor to perform operations. The operations can include receiving optical data from the detector, determining a polarization change of the reflected light, the polarization change being a function of the optical data, and determining a thickness of the surface layer using the polarization change and the wavelength of the incident light. The optical data can include information regarding the phase difference of the reflected light and the incident light. Also described are other embodiments.

In an optical measuring method, a first spectrum and a second spectrum are obtained from a pattern and a thin layer formed on the pattern by a deposition process using an ellipsometer respectively. A skew spectrum is obtained between the first spectrum and the second spectrum. A fourier transform operation is performed on the skew spectrum to calculate a thickness of the thin layer on the pattern.