An optical measurement apparatus includes a light source unit generating and outputting light, a polarized light generating unit generating polarized light from the light, an optical system generating a pupil image of a measurement target, using the polarized light, a self-interference generating unit generating multiple beams that are split from the pupil image, and a detecting unit detecting a self-interference image generated by interference of the multiple beams with each other.

The invention relates to a method for measuring a multilayered substrate (1, 1′, 1″), particularly with at least one structure (7, 7′, 7″, 7′″, 7.sup.IV, 7.sup.V) with critical dimensions, particularly with a surface structure (7, 7′, 7″, 7′″, 7.sup.IV, 7.sup.V) with critical dimensions, characterized in that the method has at least the following steps, particularly the following procedure:

producing (110) the substrate (1, 1′, 1″) with a plurality of layers (2, 3, 4, 5, 6, 6′, 6″), particularly with a structure (7, 7′, 7″, 7′″, 7.sup.IV, 7.sup.V), particularly with a structure (7, 7′, 7″, 7″′, 7.sup.IV, 7.sup.V) on a surface (6o, 6′o, 6″o) of an uppermost layer (6, 6′, 6″), wherein the dimensions of the layers and in particular the structures are known,

measuring (120) the substrate (1, 1′, 1″), and in particular the structure (7, 7′, 7″, 7′″, 71.sup.IV, 7.sup.V)) using at least one measuring technology,

creating (130) a simulation of the substrate using the measurement results from the measurement of the substrate (1, 1′, 1″),

comparing (140) the measurement results with simulation results from the simulation of the substrate (1, 1′, 1″),

optimizing the simulation (130) and renewed creation (130) of a simulation of the substrate using the measurement results from the measurement of the substrate (1, 1′, 1″), in the event that there is a deviation of the measurement results from the simulation results, or calculating (150) parameters of further substrates, in the event that the measurement results correspond to the simulation results.

It is desirable to provide an information processing apparatus, an information processing method, a program, and a monitoring system capable of monitoring a condition of a measured surface highly accurately and using the monitoring result effectively. To attain the aforementioned object, according to a mode of the present invention, an information processing apparatus includes an obtaining module and a generating module. The obtaining module obtains measuring data about a measured surface. The generating module generates covering material information about a covering material that covers the measured surface based on a feature of the obtained measuring data.

An optical scanning system includes a radiating source capable of outputting a source light beam, a de-scan lens that is configured to output a de-scanned light beam, the de-scan lens is located approximately one focal length of the de-scan lens from an sample irradiation location, a focusing lens that is configured to output a focused light beam, a first non-polarizing beam splitter configured to be irradiated by at least a portion of the focused light beam, a second non-polarizing beam splitter configured to be irradiated by at least a portion of the focused light beam that is reflected by the first non-polarizing beam splitter, and a detector that is located at approximately one focal length of the focusing lens from the focusing lens, the detector is configured to be irradiated by at least a portion of the focused light beam that is not reflected by the second non-polarizing beam splitter.

A diffractive optical element (10) for a test interferometer (100) measures a shape of an optical surface (102). Diffractive shape measuring structures (16) are arranged on a used surface (14) of the element and generate a test wave (122) irradiating the surface when the element is arranged in the interferometer. At least one test field (18) several profile properties of test structures contained in the test field. The profile properties characterize a profile line of the test structures extending transversely with respect to the used surface and include a flank angle of the profile line, a profile depth and a depth of a microtrench in a bottom region of a trench-shaped profile of the test structures. The test field is arranged at one location of the used surface instead of the diffractive shape measuring structures such that the test field is surrounded by several diffractive shape measuring structures.

An optical metrology model for in-line thickness measurements of a film overlying non-ideal structures on a substrate is generated by performing pre-measurements prior to deposition of the film and performing post-measurements after the deposition. The pre- and post-measurements are performed at at least one of multiple polarization angles or multiple orientations of the substrate. Differences in reflectance between the pre- and post-measurements are determined at the multiple polarization angles and the multiple orientations. At least one of the multiple polarization angles or the multiple orientations are identified where the differences in reflectance are indicative of a suppressed influence from the non-ideal structures. The optical metrology model is generated using the identified polarization angles and the identified orientations as inputs to a machine-learning algorithm

Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S1) of introducing a reactive gas having a deposit property to a processing chamber and forming a deposit layer over the surface of a pattern to be etched of a substrate to be etched, the etching process (S2) of removing a reaction product of the deposit layer and the surface of the pattern to be etched, and a monitoring process (S3) of irradiating light to the pattern to be etched at the time of the depo process of cycle etching for executing two processes alternately and working a fine pattern and monitoring a change amount of the film thickness of the deposit layer by change of a coherent light having a specific wavelength reflected by the pattern to be etched, the depo process being for forming the deposit layer, in which a processing condition of processes for forming the deposit layer of the next cycle and onward of cycle etching is determined so that an indicator of the depo film thickness calculated from the change amount of the film thickness of the deposit layer monitored falls in a predetermined range compared to reference data.

[Object] It is desirable to provide an information processing apparatus, an information processing method, a program, and a monitoring system capable of monitoring a condition of a measured surface highly accurately and using the monitoring result effectively.

[Solving Means] To attain the aforementioned object, according to a mode of the present invention, an information processing apparatus includes an obtaining module and a generating module. The obtaining module obtains measuring data about a measured surface. The generating module generates covering material information about a covering material that covers the measured surface based on a feature of the obtained measuring data.

Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.