A testing circuit includes a first circuit and a second circuit. The first circuit and second circuit have a first capacitor and a second capacitor. The first circuit is connected to a first transistor. The second circuit is connected to a second transistor. A first inductor has a first terminal connected to an input of the testing circuit and a second terminal connected to a source of the second transistor. A first diode has an anode connected to ground and a cathode connected to the second terminal of the first inductor. The second capacitor has a first terminal connected to a drain of the second transistor and a second terminal connected to ground. The first capacitor has a first terminal connected to the input of the testing circuit and a second terminal connected to ground.

A test and measurement instrument has a user interface, one or more probes to connect to a device under test (DUT), and one or more processors configured to execute code to cause the one or more processors to: receive waveform data from the DUT after activation of the DUT by application of power from a power supply, and application of at least a first and second pulse from a source instrument, locate one or more reverse recovery regions in the waveform data, determine a reverse recovery time for the DUT from the reverse recovery region, and display a reverse recovery plot of the one or more reverse recovery regions on the user interface, the reverse recovery plot being automatically configured to display one or more of the reverse recovery regions, and including at least one characteristic for the one or more reverser recovery regions annotated on the reverse recovery plot. A method of providing reverse recovery measurements for a device under test (DUT) includes receiving waveform data through the probes from the DUT after activation of the DUT by application of power from a power supply, and application of a first and second pulse from a source instrument, locating one or more reverse recovery regions in the waveform data, determining a reverse recovery time for the DUT for the one or more reverse recovery regions, and displaying a reverse recovery plot of the one or more reverse recovery regions on the user interface, the reverse recovery plot being automatically configured to display the one or more reverse recovery regions, and including at least one characteristic of the one or more reverse recovery regions annotated on the reverse recovery plot.

A testing circuit includes a first circuit and a second circuit. The first circuit has a first capacitor and a second capacitor. The first circuit is configured to transfer at least a portion of a first voltage across the first capacitor to the second capacitor. The second circuit has the first capacitor and the second capacitor. The second circuit is configured to transfer at least a portion of a second voltage across the second capacitor to the first capacitor.

A testing circuit includes a first circuit and a second circuit. The first circuit has a first capacitor and a second capacitor. The first circuit is configured to transfer at least a portion of a first voltage across the first capacitor to the second capacitor. The second circuit has the first capacitor and the second capacitor. The second circuit is configured to transfer at least a portion of a second voltage across the second capacitor to the first capacitor.

A system, method and apparatus for measuring carrier lifetime of a device comprises subjecting a test device to a voltage via a voltage source associated with the test system, disconnecting the test device from the voltage source, measuring the voltage as a function of time, measuring the current as a function of time, and determining a carrier lifetime of the test piece according to the slope of the measured voltage and the measured current.

The present disclosure discloses a chip abnormality detecting circuit and a chip abnormality detecting device. The circuit includes an abnormal signal detecting circuit configured to detect a reverse cutoff characteristic of an electrostatic discharge (ESD) protection diode of the chip to be detected, and output a corresponding detection signal.

A wafer test probe system, probe card, and method to test back-to-back connected first and second transistors of a wafer. The probe card includes a waveform generator circuit and probe needles to couple the waveform generator circuit to provide a first pulse signal of a first polarity using a body diode of the first transistor to test the second transistor, and to provide a second pulse signal of a second polarity using a body diode of the second transistor to the test the first transistor. One example includes a resistor connected between the waveform generator circuit and one of the probe needles. The probe card includes a probe needle to connect a sense transistor of the wafer to the first transistor during wafer probe testing.

The present disclosure discloses a chip abnormality detecting circuit and a chip abnormality detecting device. The circuit includes an abnormal signal detecting circuit configured to detect a reverse cutoff characteristic of an electrostatic discharge (ESD) protection diode of the chip to be detected, and output a corresponding detection signal.

A transient voltage suppressor (TVS) can include an input line, a return line, and a plurality of TVS diodes disposed in series between the input line and the return line. The TVS can include a switch assembly operatively connected to the plurality of TVS diodes and configured to bypass at least one of the plurality of TVS diodes to allow a remainder of the plurality of TVS diodes to be tested at a voltage that is lower than if the switch assembly were not employed.

An electronic test equipment apparatus includes a power terminal configured to receive power, an interface for a device under test (DUT), at least one power transistor connected in series between the power terminal and the interface for the DUT, and a protection circuit. The protection circuit is configured to: switch on the at least one power transistor, to electrically connect the power terminal to the DUT through the interface as part of a test routine; and subsequently automatically switch off the at least one power transistor after a predetermined delay, to electrically disconnect the power terminal from the DUT regardless of whether the DUT passes or fails the test routine. A voltage clamp circuit for electronic test equipment and corresponding methods of testing devices using such electronic test equipment are also described.