A burn-in board management system includes a production burn-in apparatus and a burn-in board status computer. The production burn-in apparatus is configured to test a plurality of integrated circuit devices mounted in slots of a burn-in board and comprising a first controller configured to generate a first burn-in board status map, wherein the first controller is further configured to suspend the burn-in board when the first burn-in board status map of the burn-in board demonstrates that more than a threshold percentage of the slots of the burn-in board are determined to be malfunctioned. The burn-in board status computer is communicably connected with the first controller of the production burn-in apparatus and configured to receive the first burn-in board status map.

Abstract of Disclosure A method for testing radiation susceptibility includes transmitting radiation wave to a device under test, measuring the device under test to generate a first voltage according to the radiation wave, outputting a reference voltage to a coupling device so that the coupling device generates a second voltage according to the reference voltage, adjusting the reference voltage so that the second voltage approximates the first voltage, storing the adjusted reference voltage, outputting the second voltage to the device under test according to the adjusted reference voltage to simulate an impact of the radiation wave to the device under test, the device under test accordingly transmitting a control signal to the coupling device after receiving the second voltage, and determining a status of the device under test according to the control signal.

A method of testing semiconductor devices includes contacting bond pads coupled to integrated circuitry on a first die of a plurality of interconnected die on a substrate using a probe system having probes and probe tests including parametric tests, continuity tests, and a kill die subroutine. Probe tests using the probe program are performed. Die are binned into a first bin (Bin 1 die) for being a good die for all probe tests, or a second bin (Bin 2 die) for failing at least one of continuity tests and parametric tests. The Bin 2 die are divided into a first sub-group that failed the continuity tests and a second sub-group that do not fail the continuity tests. A kill die subroutine is triggered including applying power sufficient to selectively cause damage to the second sub-group of Bin 2 die to generate a continuity failure and thus generate kill die.

A burn-in board management system includes a production burn-in apparatus and a burn-in board status computer. The production burn-in apparatus is configured to test a plurality of integrated circuit devices mounted in slots of a burn-in board and comprising a first controller configured to generate a first burn-in board status map, wherein the first controller is further configured to suspend the burn-in board when the first burn-in board status map of the burn-in board demonstrates that more than a threshold percentage of the slots of the burn-in board are determined to be malfunctioned. The burn-in board status computer is communicably connected with the first controller of the production burn-in apparatus and configured to receive the first burn-in board status map.

A system and method for Z-PAT defect-guided statistical outlier detection of semiconductor reliability failures includes receiving electrical test bin data with semiconductor die data for a plurality of wafers in a lot generated by a statistical outlier detection subsystem configured to perform Z-direction Part Average Testing (Z-PAT) on test data generated by an electrical test subsystem after fabrication of the plurality of wafers in the lot, receiving characterization data for the plurality of wafers in the lot generated by a semiconductor fab characterization subsystem during the fabrication of the plurality of wafers in the lot, determining a statistical correlation between the electrical test bin data and the characterization data at a same x, y position on each of the plurality of wafers in the lot, and locating defect data signatures on the plurality of wafers in the lot based on the statistical correlation.

Systems and methods for semiconductor defect-guided burn-in and system level tests (SLT) are configured to receive a plurality of inline defect part average testing (I-PAT) scores from an inline defect part average testing (I-PAT) subsystem, where the plurality of I-PAT scores is generated by the I-PAT subsystem based on semiconductor die data for a plurality of semiconductor dies, where the semiconductor die data includes characterization measurements for the plurality of semiconductor dies, where each I-PAT score of the plurality of I-PAT scores represents a defectivity determined by the I-PAT subsystem based on a characterization measurement of a corresponding semiconductor die of the plurality of semiconductor dies; apply one or more rules to the plurality of I-PAT scores during a dynamic decision-making process; and generate one or more defect-guided dispositions for at least one semiconductor die of the plurality of semiconductor dies based on the dynamic decision-making process.

Systems and methods for semiconductor adaptive testing using inline defect part average testing are configured to receive a plurality of inline defect part average testing (I-PAT) scores from an I-PAT system, where the plurality of I-PAT scores is generated by the I-PAT system based on semiconductor die data for a plurality of semiconductor dies, where the semiconductor die data includes characterization measurements for the plurality of semiconductor dies, where each I-PAT score of the plurality of I-PAT scores represents a weighted defectivity determined by the I-PAT system based on a characterization measurement of a corresponding semiconductor die of the plurality of semiconductor dies; apply one or more rules to the plurality of I-PAT scores during a dynamic decision-making process; and generate one or more adaptive tests for at least one semiconductor die of the plurality of semiconductor dies based on the dynamic decision-making process.

An automated test equipment comprises a tester control configured to broadcast and/or specific upload to matching module input data and/or device-specific data including keys and/or credentials and/or IDs and/or configuration information. The automated test equipment further comprises a channel processing unit configured to transform input data using device specific data in order to obtain device-under-test adapted data for testing the device under test. The channel processing unit further configured to process the DUT data using device specific data in order to evaluate the DUT data. A method and a computer program for testing one or more devices under test in an automated test equipment are also disclosed.

An electronic component handling apparatus handles a DUT and includes: an acquiring device that acquires current three-dimensional shape data of a DUT container having a plurality of accommodating portions each capable of accommodating the DUT; and a computer device that: calculates a first correction amount from the current three-dimensional shape data and corrects the current three-dimensional shape data based on the first correction amount; extracts, from the corrected three-dimensional shape data, at least one of a height and a slope of each of predetermined regions of the DUT container; and determines an accommodation state of the DUT based on an extraction result. The first correction amount represents at least one of a movement amount and a rotation amount in a planar direction of the current three-dimensional shape data with respect to an initial state of the DUT container set in advance.

A system and method for Z-PAT defect-guided statistical outlier detection of semiconductor reliability failures includes receiving electrical test bin data with semiconductor die data for a plurality of wafers in a lot generated by a statistical outlier detection subsystem configured to perform Z-direction Part Average Testing (Z-PAT) on test data generated by an electrical test subsystem after fabrication of the plurality of wafers in the lot, receiving characterization data for the plurality of wafers in the lot generated by a semiconductor fab characterization subsystem during the fabrication of the plurality of wafers in the lot, determining a statistical correlation between the electrical test bin data and the characterization data at a same x, y position on each of the plurality of wafers in the lot, and locating defect data signatures on the plurality of wafers in the lot based on the statistical correlation.