An inspection apparatus includes a light sensor that detects light from a semiconductor device to which an electric signal has been input, an optical system that guides light from the semiconductor device to the light sensor, and a control device electrically connected to the light sensor. The control device includes a measurement unit that acquires waveform data obtained by optical measurement for each of a plurality of positions on a defective semiconductor device and waveform data obtained by the optical measurement for each of a plurality of positions on a non-defective semiconductor device, a calculation unit that calculates a degree of correspondence between the waveform data of the defective semiconductor device and the waveform data of the non-defective semiconductor device, and an analysis unit that analyzes a defective part of the defective semiconductor device on the basis of the degree of correspondence for each of the plurality of positions.

At least three dark field images of a feature on a semiconductor wafer can be formed using an optical inspection system. Each of the at least three dark field images is from a different channel of the optical inspection system using an aperture that is fully open during image generation. The dark field images can be fused into a pseudo wafer image that is aligned with a corresponding design. This alignment can improve care area placement.

A method includes capturing a photon emission microscope (PEM) image of an integrated circuit (IC), and identifying emission sites in the PEM image, where the emission sites are associated with a leakage current. A set of common nets is found that connects multiple emission sites using layout data and/or netlist data in computer-aided design (CAD) data. From the layout data and/or netlist data, a critical net is identified from the set of common nets connecting a threshold number of emission sites. The critical net is cross-mapped, by a processor, tip netlist data in the CAD data. A particular device is identified from the netlist data that has an output pin connected to the critical net. The particular device identified from the netlist data is cross-mapped, by a processor, to the layout data, wherein the critical net connects at least two devices at the identified emission sites including the particular device.

A method includes capturing a photon emission microscope (PEM) image of an integrated circuit (IC), and identifying emission sites in the PEM image, where the emission sites are associated with a leakage current. A set of common nets is found that connects multiple emission sites using layout data and/or netlist data in computer-aided design (CAD) data. From the layout data and/or netlist data, a critical net is identified from the set of common nets connecting a threshold number of emission sites. The critical net is cross-mapped, by a processor, tip netlist data in the CAD data. A particular device is identified from the netlist data that has an output pin connected to the critical net. The particular device identified from the netlist data is cross-mapped, by a processor, to the layout data, wherein the critical net connects at least two devices at the identified emission sites including the particular device.

According to one aspect, an integrated circuit includes: an electronic module configured to generate a voltage at an output, and an electronic control circuit coupled to an output of the electronic module, the electronic control circuit comprising an emissive electronic component. The electronic control circuit is configured to cause the emissive electronic component to emit light radiation as a function of a value of the voltage at the output of the electronic module relative to a value of an operating voltage of the electronic module, and the operating voltage is specific thereto during normal operation of this electronic module. The light radiation emitted by the emissive electronic component is configured to diffuse to an outer face of the integrated circuit.

According to one aspect, an integrated circuit includes: an electronic module configured to generate a voltage at an output, and an electronic control circuit coupled to an output of the electronic module, the electronic control circuit comprising an emissive electronic component. The electronic control circuit is configured to cause the emissive electronic component to emit light radiation as a function of a value of the voltage at the output of the electronic module relative to a value of an operating voltage of the electronic module, and the operating voltage is specific thereto during normal operation of this electronic module. The light radiation emitted by the emissive electronic component is configured to diffuse to an outer face of the integrated circuit.

An inspection apparatus is provided to inspect an imaging device formed on an inspection object by bringing a contact terminal into electrical contact with a wiring layer of the imaging device while causing light to enter the imaging device. The light enters the imaging device from a back surface that is a surface on the side opposite to the side on which the wiring layer is formed. The inspection apparatus includes a substrate support made of a light-transmissive material and on which the inspection object is supported such that the substrate support faces a back surface of the imaging device, and a light irradiation mechanism disposed to be opposite to the inspection object with the substrate support interposed therebetween and having a plurality of LEDs such that light from the LEDs is oriented toward the inspection object.

A method for the testing of optoelectronic chips which are arranged on a wafer and have electrical interfaces in the form of contact pads and optical interfaces which are arranged to be fixed relative thereto in the form of optical deflection elements, e.g., grating couplers, with a specific coupling angle. The wafer is adjusted in three adjustment steps with one of the chips relative to a contacting module such that the electrical interfaces of the chip and contacting module contact one another, and the optical interfaces of the chip and contacting module occupy a maximum position of the optical coupling.

A method for the testing of optoelectronic chips which are arranged on a wafer and have electrical interfaces in the form of contact pads and optical interfaces which are arranged to be fixed relative thereto in the form of optical deflection elements, e.g., grating couplers, with a specific coupling angle. The wafer is adjusted in three adjustment steps with one of the chips relative to a contacting module such that the electrical interfaces of the chip and contacting module contact one another, and the optical interfaces of the chip and contacting module occupy a maximum position of the optical coupling.

An inspection apparatus for inspecting a backside irradiation type imaging device formed on an inspection object includes: a stage on which the inspection object is mounted such that the stage faces a rear surface of the backside irradiation type imaging device, wherein the stage includes: a transmitter including a flat plate formed of a light transmitting material, and configured to mount the inspection object on the transmitter; and a light emitter disposed at a location facing the inspection object with the transmitter interposed between the light emitter and the inspection object, and configured to emit light toward the transmitter, and wherein the transmitter transmits the light from the light emitter while diffusing the light.