An image forming apparatus includes a fixing member, a heating portion configured to heat the fixing member by being supplied with electric power, a power source configured to supply electric power to the heating portion, a temperature detector, a controller configured to control power supply from the power source to the heating portion based on the output voltage from the temperature detector, a reference voltage generator configured to generate a reference voltage, and a breaker configured to stop the power supply from the power source to the heating portion. The reference voltage generator is configured to output the reference voltage that changes with time having elapsed since a start of heating at which the power supply to the heating portion was started by the controller.

Programmable temperature regulation circuits, and methods of operating programmable temperature regulation circuits, are disclosed for providing heat to a target area on a chip. The programmable temperature regulation circuits include a heating element on the chip, and a regulation loop operatively connected to the heating element. The regulation loop includes a first diode that measures the temperature in the target area, and an operational transconductance amplifier. The operational transconductance amplifier receives a reference temperature voltage from a reference voltage, and a temperature feedback voltage from the diode, and generates an output voltage to control the provision of electrical power to the heating element.

The objective is to provide a function of detecting loss of a current detection function, at a time when a switching device has an open failure, in an arm that has the current detection function and a temperature detection function and in which two or more switching devices are connected in parallel with one another. A switching apparatus includes a current detector and a temperature detector provided in at least one of the two or more switching devices that are connected in parallel with one another and a controller that determines an overcurrent in the switching device in which the current detector is provided, that determines an overheating state and a temperature-rising failure in the switching device in which the temperature detector is provided, based on an output of the temperature detector, and that controls the switching devices.

A sub-nW voltage reference is presented that provides inherently low process variation and enables trim-free operation for low-dropout regulators and other applications in nW microsystems. Sixty chips from three different wafers in 180 nm CMOS are measured, showing an untrimmed within-wafer σ/μ of 0.26% and wafer-to-wafer σ/μ of 1.9%. Measurement results also show a temperature coefficient of 48-124 ppm/° C. from −40° C. to 85° C. Outputting a 0.986V reference voltage, the reference operates down to 1.2V and consumes 114 pW at 25° C.

A method of controlling current includes receiving a current value detected by at least one regulator supplying a unit-specific voltage to each unit of an electronic device. The method also includes controlling a current flowing through the each unit on the basis of the current value.

An on chip temperature independent current generator for generating a temperature independent current, said temperature independent current generator including: an on chip current generator having an output to provide an electrical current being proportional to an absolute temperature of a chip in which the temperature independent current generator is embedded; and an on chip transistor having a base connected to a temperature independent reference voltage generator, a collector connected to a current mirror, and an emitter connected to the output of the on chip current generator and connected via an on chip resistor to a reference potential, wherein the current mirror is adapted to mirror a collector current flowing to the collector of said on chip transistor to generate the temperature independent current.

A method and circuit for trimming a bandgap reference are described. The bandgap reference circuit comprises a first diode which is arranged in series with a first resistor between a reference point and a reference potential V.sub.SS. The circuit also comprises a second diode which is arranged in series with a second resistor and a third resistor between the reference point and the reference potential V.sub.SS. In addition, the bandgap reference circuit comprises a trimming network, wherein a bandgap reference voltage V.sub.BG CORE is provided at a midpoint between the trimming network and the current source. The circuit also comprises an operational amplifier. The method (700) comprises measuring a first diode voltage across a replica element of the first diode; determining a first resistance of a replica element of the first resistor; and setting a resistance of the trimming network using the first diode voltage and the first resistance.

An electronic device includes an integrated circuit with a MOS transistor and a heating circuit electrically coupled to at least two points of one of the source or drain semiconductive region of the transistor. A portion of the source or drain semiconductive region between the two points forms a resistive element. The heating circuit is configured to cause a current to circulate through the resistive element between the two points to heat an active region of the transistor.

The present invention relates to an organic light emitting diode display device which minimizes a temperature increase of an organic light emitting panel in consideration of an input image and an external environment, the organic light emitting diode display device comprising: an organic light emitting panel; a power supply unit for supplying a current to the organic light emitting panel; a control unit for performing an automatic current limit for controlling the maximum value of the current supplied to the organic light emitting panel to be less than or equal to the current limit value; and a temperature sensor for sensing the temperature of the organic light emitting panel, wherein the control unit may change the current limit value according to the present temperature of the organic light emitting panel.

The present invention relates to an organic light emitting diode display device which minimizes a temperature increase of an organic light emitting panel in consideration of an input image and an external environment, the organic light emitting diode display device comprising: an organic light emitting panel; a power supply unit for supplying a current to the organic light emitting panel; a control unit for performing an automatic current limit for controlling the maximum value of the current supplied to the organic light emitting panel to be less than or equal to the current limit value; and a temperature sensor for sensing the temperature of the organic light emitting panel, wherein the control unit may change the current limit value according to the present temperature of the organic light emitting panel.