A memory device includes a system block for storing test information and includes a data block including memory cells connected to a plurality of low bank column lines and a plurality of high bank column lines. The memory device also includes a column repair controller configured to detect, based on the test information, a concurrent repair column line in which a low bank column line among the plurality of low bank column lines and a high bank column line the plurality of high bank column lines corresponding to the same column address are concurrent repaired.

Memory array structures providing for determination of resistive characteristics of access lines might include a first block of memory cells, a second block of memory cells, a first current path between a particular access line of the first block of memory cells and a particular access line of the second block of memory cells, and, optionally, a second current path between the particular access line of the second block of memory cells and a different access line of the first block of memory cells. Methods for determining resistive characteristics of access lines might include connecting the particular access line of the first block of memory cells to a driver, and determining the resistive characteristics in response to a current level through that access line and a voltage level of that access line.

The present disclosure includes systems, apparatuses, and methods for improving safety and correctness of data reading in flash memory devices associated with System-on-Chips. An example may include a plurality of sub-arrays, a plurality of memory blocks in each sub-array of the plurality of sub-arrays, a plurality of memory rows in each memory block of the plurality of memory blocks, and a plurality of extended pages in each memory row of the plurality of memory rows, wherein each extended page of the plurality of extended pages includes a group of data, an address, and an error correction code (ECC).

The present disclosure includes systems, apparatuses, and methods for improving safety and correctness of data reading in flash memory devices associated with System-on-Chips. An example may include a plurality of sub-arrays, a plurality of memory blocks in each sub-array of the plurality of sub-arrays, a plurality of memory rows in each memory block of the plurality of memory blocks, and a plurality of extended pages in each memory row of the plurality of memory rows, wherein each extended page of the plurality of extended pages includes a group of data, an address, and an error correction code (ECC).

The present disclosure relates to a method for improving the safety of the reading phase of a non-volatile memory device including at least an array of memory cells and with associated decoding and sensing circuitry and a memory controller, the method comprising:

storing in a dummy row of said memory block at least a known pattern;

performing some reading cycles changing the read trimming parameters up to the moment wherein said known value is read correctly;

adopting the trimming parameters of the correct reading for the subsequent reading phases.

The disclosure further relates to a memory device structured for implementing the above method.

The present disclosure relates to a method for improving the safety of the reading phase of a non-volatile memory device including at least an array of memory cells and with associated decoding and sensing circuitry and a memory controller, the method comprising:

storing in a dummy row of said memory block at least a known pattern;

performing some reading cycles changing the read trimming parameters up to the moment wherein said known value is read correctly;

adopting the trimming parameters of the correct reading for the subsequent reading phases.

The disclosure further relates to a memory device structured for implementing the above method.

Memory having a controller configured to cause the memory to determine a respective raw data value of a plurality of possible raw data values for each memory cell of a plurality of memory cells, count occurrences of each raw data value for a first set of memory cells of the plurality of memory cells, store a cumulative number of occurrences for each raw data value, determine a plurality of valleys of the stored cumulative number of occurrences for each raw data value with each valley corresponding to a respective raw data value of the plurality of possible raw data values, and, for each memory cell of a second set of memory cells of the plurality of memory cells, determine a data value for that memory cell in response to the raw data value for that memory cell and the respective raw data values of the plurality of valleys.

The present disclosure relates to a method for improving the safety of the reading phase of a non-volatile memory device including at least an array of memory cells and with associated decoding and sensing circuitry and a memory controller, the method comprising: storing in a dummy row of said memory block at least a known pattern; performing some reading cycles changing the read trimming parameters up to the moment wherein said known value is read correctly; adopting the trimming parameters of the correct reading for the subsequent reading phases. The disclosure further relates to a memory device structured for implementing the above method.

The present disclosure relates to a method for improving the safety of the reading phase of a non-volatile memory device including at least an array of memory cells and with associated decoding and sensing circuitry and a memory controller, the method comprising: storing in a dummy row of said memory block at least a known pattern; performing some reading cycles changing the read trimming parameters up to the moment wherein said known value is read correctly; adopting the trimming parameters of the correct reading for the subsequent reading phases. The disclosure further relates to a memory device structured for implementing the above method.

A storage circuit includes: the array of a memory cell MC including a variable-resistance element; a conversion circuit that converts the resistance value of each memory cell into the signal level of an electric signal; a reference signal generation circuit that generates a reference signal common to a plurality of columns; a correction circuit that corrects one of the signal level of the reference signal and the signal level of the electric signal for each column of the array of the memory cell; and an RW circuit that determines data stored in the memory cell belonging to a corresponding column by comparing one of the reference level and the signal level of the electric signal, corrected by the correction circuit, and the other of the reference level and the signal level of the electric signal.