A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.

A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.

The present disclosure relates to semiconductor structures and, more particularly, to a thin film resistor and methods of manufacture. A structure includes: a thin film resistor having an opening and being between an upper insulator material and a lower insulator material; and a contact extending through the opening in the thin film resistor and into the lower insulator material.

The present disclosure relates to semiconductor structures and, more particularly, to a thin film resistor and methods of manufacture. A structure includes: a thin film resistor having an opening and being between an upper insulator material and a lower insulator material; and a contact extending through the opening in the thin film resistor and into the lower insulator material.

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element includes a ceramic carrier having a top side and an underside, a respective NTC layer arranged on the top side and on the underside of the carrier and at least one electrode, wherein a resistance of the respective NTC layer depends on a thickness and/or geometry of the respective NTC layer.

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element includes a ceramic carrier having a top side and an underside, a respective NTC layer arranged on the top side and on the underside of the carrier and at least one electrode, wherein a resistance of the respective NTC layer depends on a thickness and/or geometry of the respective NTC layer.

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element for temperature measurement includes a ceramic carrier and at least one NTC layer printed on the carrier, wherein the NTC layer covers at least part of a surface of the carrier, and wherein the sensor element is designed for wireless contacting.

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element for temperature measurement includes a ceramic carrier and at least one NTC layer printed on the carrier, wherein the NTC layer covers at least part of a surface of the carrier, and wherein the sensor element is designed for wireless contacting.

A thin film resistor has a higher resistivity compared to that of a conventional thin film resistor. The thin film resistor includes 30-45 at % of nickel, 15-30 at % of chromium, 1-10 at % of manganese, 10-30 at % of yttrium and 1-20 at % of tantalum.

An Al.sub.2O.sub.3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10.sup.6/K to 16*10.sup.6/K, in particular from 8.5*10.sup.6/K to 14*10.sup.6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.