The processing of PFAS to convert them into safer substances comprises introducing gaseous or vapour phase PFAS into a treatment zone where microwave radiation of predetermined frequency and power level creates a plasma which at least partially dissociates the PFAS. There is also a system for remediating particulate solids, particularly soil, contaminated with PFAS, the method including directing microwave radiation to a body of particulate solids in the closed vessel so as to promote vaporization of PFAS which are then treated by exposure to the microwave produced plasma. Continuous and batch processing apparatus are disclosed. A preheating stage can dry the particulate solids to a pre-determined moisture content, and then a higher energy microwave heating promotes vaporization of PFAS. A partial vacuum created where particulate solids heated by the microwave radiation are yielding up PFAS promotes the vaporization of PFAS. Alternating cycles of high pressure during microwave irradiation and low pressure or partial vacuum can avoid plasma generation in the heating stage while optimizing vaporization of PFAS from the particulate solids.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.

System and method for decapsulation of plastic integrated circuit packages by providing a microwave generator, providing a Beenakker resonant cavity connected to the microwave generator, which cavity comprises a coupling antenna loop, providing the cavity with a tube or tubes for supply of plasma gas and etchant gas or gases and with means for igniting the plasma gas, and providing that the cavity is set at a predefined value of its Q factor by embodying the coupling antenna loop and/or a wire optionally attached to the coupling antenna loop in a metal or metal alloy, or providing that at least at part of its surface area the coupling antenna loop and/or the wire is coated with a metal or metal alloy different than copper and with a higher resistivity than copper.

This plasma processing apparatus includes a processing container that defines a plasma processing space, a holder that holds a substrate to be processed, a gas supply unit that supplies gas into the plasma processing space, an antenna that radiates microwaves to the plasma processing space, a coaxial waveguide that supplies the microwaves to the antenna, a plurality of stubs that regulate distribution of the microwaves radiated from the antenna according to an insertion amount, a measuring unit that measures density of the plasma generated in the plasma processing space by the microwaves radiated from the antenna or a parameter having a correlation with the density of the plasma along a circumferential direction of the substrate to be processed, and a controller that individually controls an insertion amount of each of the plurality of stubs based on the density of the plasma or the parameter.

A plasma applicator includes a plasma discharge tube and a microwave cavity at least partially surrounding a portion of the plasma discharge tube. Microwave energy is coupled to the microwave cavity via a coupling iris. At least two orthogonal dimensions of the microwave cavity are selected such that the microwave energy in the microwave cavity propagates in a transverse electric (TE) mode. Primary electric fields generated from the microwave energy combine with an evanescent electric field generated from the coupling iris, such that a combined electric field in the microwave cavity is substantially uniform along the longitudinal axis of the plasma discharge tube. A plurality of radial microwave chokes is disposed over an exterior of the plasma discharge tube. Positions of the microwave chokes are such that microwave energy propagating in the TE mode and a transverse electric magnetic (TEM) mode is attenuated.

Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.

A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.

Microwave plasma slowing system for a plasma shutter comprises a waveguide-band transmission for interconnection of the system with a generator, and for letting waves from the generator into the plasma shutter, a bridge band interconnected with the waveguide-band transmission, two parallel band waistlines, interconnected by its one end with the bridge band, where the band waistlines are flat plates, where one of its sides is provided with tenons arranged side by side along the axis of the band waistlines with orientation in a such way, that the tenons arranged on the one side of the first band waistline placed in turns between the tenons arranged on the one side of the second band waistline, where the band waistlines are provided at the other end by mutually separated lockable electromagnetic oscillators.

Disclosed is a multi-port phase compensation nested apparatus for microwave-plasma deposition of diamond films. A resonant cavity part includes an inner cavity body, a ring waveguide, a slot opening, a quartz ring, a metal platform, a deposition platform, a substrate, and a recess, wherein the slot opening is located on a wall of the inner cavity body, communicating the inner cavity body with the ring waveguide.

Microwave plasma slowing system for a plasma shutter comprises a waveguide-band transmission for interconnection of the system with a generator, and for letting waves from the generator into the plasma shutter, a bridge band interconnected with the waveguide-band transmission, two parallel band waistlines, interconnected by its one end with the bridge band, where the band waistlines are flat plates, where one of its sides is provided with tenons arranged side by side along the axis of the band waistlines with orientation in a such way, that the tenons arranged on the one side of the first band waistline placed in turns between the tenons arranged on the one side of the second band waistline, where the band waistlines are provided at the other end by mutually separated lockable electromagnetic oscillators.