A wire bonding apparatus according to an embodiment bonds a wire to a bonding portion by generating an ultrasonic vibration in a state of pressing the wire onto the bonding portion. The wire bonding apparatus includes a bonding tool that causes the wire to contact the bonding portion and applies a load, an ultrasonic horn that generates the ultrasonic vibration, a load sensor that continuously detects the load applied from the bonding tool to the bonding portion, and a controller that controls the operation of the bonding tool and the ultrasonic horn. The controller analyzes data of the load output from the load sensor between when the wire contacts the bonding portion and when the ultrasonic vibration is generated, and controls the operation of the bonding tool and the ultrasonic horn based on an analysis result.

A dual side cooling power module includes: a lower substrate including a recessed portion on at least one surface thereof, a semiconductor chip formed in the recessed portion, lead frames formed at both ends of the lower substrate, and an upper substrate formed on the semiconductor chip, a portion of the lead frames, and the lower substrate.

It is an object to enable a non-destructive inspection of reliability of a bonding part and enabling an accurate inspection. A wedge tool includes: a groove which is formed along a direction of an ultrasonic vibration in a tip portion and in which a bonding wire is disposed in a wedge bonding; a first planar surface and a second planar surface disposed on both sides of the groove; and at least one convex portion formed away from the groove in at least one of the first planar surface and the second planar surface, wherein the bonding wire comes in contact with the convex portion by a deformation of the bonding wire in a bonding part of the bonding wire and a bonded object bonded to each other by a wedge bonding.

Systems and methods for controlling contamination during thermocompression bonding are provided herein. The tool generally includes a bondhead having a first channel extending in a lateral direction from a first port along a second side toward a perimeter of the bondhead. In several examples, the bondhead includes a second channel fluidly coupled to a second port and extending in a lateral direction along an inset surface of the bondhead, where the second channel at least partially surrounds the first channel. In other examples, the tool includes a vacuum manifold having a vacuum opening positioned laterally outward from the bondhead. A first flow unit is coupled to the first channel and is configured to withdraw air. A second flow unit is coupled to the second port or the manifold to withdraw fluid and prevent outgassing bonding materials from entering the first channel, depositing on the bondhead, and/or contaminating neighboring semiconductor components.

This bonding apparatus is provided with: a bonding mechanism which has a bonding surface that holds a semiconductor die in a detachable manner, with a film being interposed therebetween, and a heater that applies heat to the bonding surface; a film conveyance mechanism which supplies the film to the bonding surface; a remover bar which is able to enter between the film and the bonding surface; and a drive unit which drives the remover bar.

Systems and methods for controlling contamination during thermocompression bonding are provided herein. The tool generally includes a bondhead having a first channel extending in a lateral direction from a first port along a second side toward a perimeter of the bondhead. In several examples, the bondhead includes a second channel fluidly coupled to a second port and extending in a lateral direction along an inset surface of the bondhead, where the second channel at least partially surrounds the first channel. In other examples, the tool includes a vacuum manifold having a vacuum opening positioned laterally outward from the bondhead. A first flow unit is coupled to the first channel and is configured to withdraw air. A second flow unit is coupled to the second port or the manifold to withdraw fluid and prevent outgas sing bonding materials from entering the first channel, depositing on the bondhead, and/or contaminating neighboring semiconductor components.

A dual side cooling power module includes: a lower substrate including a recessed portion on at least one surface thereof, a semiconductor chip formed in the recessed portion, lead frames formed at both ends of the lower substrate, and an upper substrate formed on the semiconductor chip, a portion of the lead frames, and the lower substrate.

A wafer scale ultrasonic sensing device includes a substrate assembly, an ultrasonic component, a first protective layer, a first conductive circuit, a second conductive circuit, a second protective layer, a conductive material, electrical connection layers, and soldering portions. The substrate assembly includes a first wafer and a second wafer, and the second wafer covers a groove on the first wafer to define a hollow chamber. The first wafer, the second wafer, and the first protective layer are coplanar with the first conductive circuit on a first side surface and coplanar with the second conductive circuit on a second side surface. The second protective layer has an opening, where the conductive material is in the opening and is in contact with the ultrasonic component. The electrical connection layers are on the first side surface and the second side surface, and the soldering portions are respectively connected to the electrical connection layers.

Implementations of semiconductor clips may include a die attach portion coupled to a step portion, a lead attach portion directly coupled to the step portion, a first alignment feature directly coupled to a first side of the lead attach portion, and a second alignment feature directly coupled to a second side of the lead attach portion. The second side may be opposite the first side. The lead attach portion may be in a plane substantially parallel with a plane formed by the die attach portion.

Systems and methods for controlling contamination during thermocompression bonding are provided herein. The tool generally includes a bondhead having a first channel extending in a lateral direction from a first port along a second side toward a perimeter of the bondhead. In several examples, the bondhead includes a second channel fluidly coupled to a second port and extending in a lateral direction along an inset surface of the bondhead, where the second channel at least partially surrounds the first channel. In other examples, the tool includes a vacuum manifold having a vacuum opening positioned laterally outward from the bondhead. A first flow unit is coupled to the first channel and is configured to withdraw air. A second flow unit is coupled to the second port or the manifold to withdraw fluid and prevent outgas sing bonding materials from entering the first channel, depositing on the bondhead, and/or contaminating neighboring semiconductor components.