A substrate processing device includes a processing tank, a substrate holding unit, a fluid supply unit, and a control unit. The processing tank stores a processing liquid for processing a substrate. The substrate holding unit holds the substrate in the processing liquid in the processing tank. The fluid supply unit supplies a fluid to the processing tank. The control unit controls the fluid supply unit. The control unit controls the fluid supply unit such that the fluid supply unit changes supply of the fluid during a period from a start of supply of the fluid to the processing tank storing the processing liquid in which the substrate is immersed to an end of supply of the fluid to the processing tank storing the processing liquid in which the substrate is immersed.

The present disclosure provides a method for fabricating a semiconductor structure, including forming a dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, increasing a thickness of the dielectric layer in the first region, including forming an oxygen capturing layer over the dielectric layer in the first region, including forming the oxygen capturing layer over the first region and the second region, and removing the oxygen capturing layer over the second region with a mask layer, performing an oxidizing operation from a top surface of the oxygen capturing layer to increase oxygen concentration of the oxygen capturing layer, removing the oxygen capturing layer over the first region, and forming a gate structure over the dielectric layer.

A structure is manufactured by forming a mask that has an opening pattern on a fine recessed and projected structure of a substrate having the fine recessed and projected structure with an average period of 1 μm or less on a surface thereof, etching the surface of the substrate from a side of the mask to form a recessed portion which has an opening greater than the average period of the fine recessed and projected structure according to the opening pattern of the mask, the recessed portion having a depth equal to or greater than double a difference in height between recesses and projections of the fine recessed and projected structure, and then removing the mask.

A substrate processing method according to an embodiment includes a processing liquid supply step and an UV irradiation step. In the processing liquid supply step, a processing liquid is supplied to a substrate. In the UV irradiation step, the substrate after the processing liquid supply step is irradiated with ultraviolet rays having a wavelength of 200 nm or less, so that the substrate after the processing liquid supply step is destaticized.

An object of the present invention is to provide a treatment method excellently flattens an object to be treated in a case where the treatment method is applied to an object to be treated having a metal layer. Another object of the present invention is to provide a treatment liquid for an object to be treated. The method for treating an object to be treated according to an embodiment of the present invention is a method for treating an object to be treated having a step A of performing an oxidation treatment on an object to be treated having a metal layer so as to form a metal oxide layer and a step B of bringing a treatment liquid into contact with the object to be treated obtained by the step A so as to dissolve and remove the metal oxide layer, in which the treatment liquid contains an organic solvent and an acidic compound, and a content of the organic solvent is 50% by mass or more with respect to a total mass of the treatment liquid.

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a surface of a substrate, a processing film forming step of solidifying or curing the processing liquid supplied to the surface of the substrate to form, on the surface of the substrate, a processing film that holds a removal object present on the surface of the substrate, a peeling step of supplying a peeling liquid forming liquid to the surface of the substrate to put the peeling liquid forming liquid in contact with the processing film and form a peeling liquid, and peeling the processing film, in the state of holding the removal object, from the surface of the substrate by the peeling liquid, and a removing step of continuing the supply of the peeling liquid forming liquid, after the peeling of the processing film, to wash away and remove the processing film from the surface of the substrate in the state where the removal object is held by the processing film.

The present disclosure provides a method for fabricating a semiconductor structure, including forming an inter dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, forming a high-k material over the inter dielectric layer in the first region and the second region, forming an oxygen capturing layer over the high-k material in the first region, and applying oxidizing agent over the oxygen capturing layer.

A surface treatment method for the substrate surface including two or more regions, the method including reacting a compound having the formula R.sup.1—P(═O)(OR.sup.2)(OR.sup.3), a basic nitrogen-containing compound, and the regions with each other such that a water contact angle on the metal region is greater by 10° or more with respect to a water contact angle on an insulator region close to the metal region. In compound (P-1), R.sup.1 is an alkyl group, an alkoxy group, a fluorinated alkyl group or an optionally substituted aromatic hydrocarbon group and R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group, a fluorinated alkyl group or an optionally substituted aromatic hydrocarbon group.

Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

Embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. In some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature. The dielectric layer has a sidewall. The surface modification layer is along the sidewall, and the surface modification layer includes phosphorous and carbon. The conductive feature is along the surface modification layer.