Methods and apparatus for depositing carbon nanostructures such as three-dimensional graphene mesh using non-equilibrium gaseous plasma of high power density. Methods are disclosed for rapid deposition of randomly distributed graphene sheets on surfaces of substrates using decomposition of CO molecules of a high potential energy, and said excited CO molecules interacting with a substrate. The three-dimensional graphene mesh prepared according to the methods are useful in different applications such as light absorbents, fuel cells, super-capacitors, batteries, photovoltaic devices and sensors of specific gaseous molecules.

In order to enable simple removal of a substrate used for manufacturing a semiconductor element, a manufacturing method includes forming a graphene layer on a substrate portion formed of a semiconductor, forming an element portion on the graphene layer, the element portion including a semiconductor layer directly formed on the graphene layer, which takes over crystal information relating to the substrate portion when the semiconductor layer is formed on the substrate portion without intermediation of the graphene layer, and performing cutting-off between the substrate portion and the element portion at the graphene layer.

The present disclosure relates to a nanowire structure, which includes a substrate with a substrate body and an ion implantation region, a patterned mask with an opening over the substrate, and a nanowire. Herein, the substrate body is formed of a conducting material, and the ion implantation region that extends from a top surface of the substrate body into the substrate body is electrically insulating. A surface portion of the substrate body is exposed through the opening of the patterned mask, while the ion implantation region is fully covered by the patterned mask. The nanowire is directly formed over the exposed surface portion of the substrate body and is not in contact with the ion implantation region. Furthermore, the nanowire is confined within the ion implantation region, such that the ion implantation region is configured to provide a conductivity barrier of the nanowire in the substrate.

Disclosed is a method for preparing a graphyne including: supplying a precursor represented by the following Chemical Formula 1 to a chamber including a first zone and a second zone; vaporizing or subliming the precursor in the first zone; and depositing the precursor vaporized or sublimed in the second zone on a metal substrate to form the graphyne:

##STR00001## (in Chemical Formula 1, X is carbon or nitrogen, and R.sub.1 to R.sub.3 may be selected from the group consisting of hydrogen, bromine, fluorine, chlorine, and iodine, respectively).

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

A vertical field effect transistor according to an embodiment of the present invention does not require a spacer and, accordingly, remarkably alleviates the problem that electric charge is scattered at an interface, thereby having excellent electrical characteristics. The vertical field effect transistor includes a substrate, a source electrode positioned on the substrate, an active layer positioned on the source electrode and having vertically grown crystal grains, a drain electrode positioned on the active layer to be spaced by the active layer away from the source electrode, a gate insulating layer positioned on a lateral surface of the active layer, and a gate electrode positioned on the gate insulating layer.

An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10.sup.−5 Torr and the beam ratio of V/III is 20-40.

A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms.

Provided herein are processes for transferring high quality large-area graphene layers (e.g., single-layer graphene) to a flexible substrate based on preferential adhesion of certain thin metallic films to graphene followed by lamination of the metallized graphene layers to a flexible target substrate in a process that is compatible with roll-to-roll manufacturing, providing an environmentally benign and scalable process of transferring graphene to flexible substrates.