A method of fabricating a semiconductor device includes implanting dopants into a silicon substrate, and performing a thermal anneal process that activates the implanted dopants. In response to activating the implanted dopants, a layer of ultra-thin single-crystal silicon is formed in a portion of the silicon substrate. The method further includes performing a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon.

Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (μτ product) in a wide range, wherein the main surface has an area of 100 mm.sup.2 or more and has 50% or more of regions where the μτ product is 1.0×10.sup.−3 cm.sup.2/V or more based on the entire main surface, and a method for effectively producing the same.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H.sub.2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

A seed layer for inducing nucleation to form a layer of material is described. In an embodiment, the seed layer comprising a layer of two-dimensional monolayer amorphous material having a disordered atomic structure adapted to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals interaction to form the layer of material, wherein each of the electric potential wells has a potential energy larger in magnitude than surrounding thermal energy to capture adatoms on the surface of the seed layer. Embodiments in relation to a method for forming the seed layer, a heterostructure comprising the seed layer, a method for forming the heterostructure comprising the seed layer, a device comprising the heterostructure and a method of enhancing vdW interaction between adatoms and a surface of the seed layer are also described.

Embodiments of the present disclosure are directed towards an integrated circuit (IC) die. In embodiments, an IC die may include a semiconductor substrate, a group III-Nitride or II-VI wurtzite layer disposed over the semiconductor substrate, and a plurality of buffer structures at least partially embedded in the group III-Nitride or II-VI wurtzite layer. In some embodiments, each of the plurality of buffer structures may include a central member disposed over the semiconductor substrate, a lower lateral member disposed over the semiconductor substrate and extending laterally away from the central member, and an upper lateral member disposed over the central member and extending laterally from the central member in an opposite direction from the lower lateral member. The plurality of buffer structures may be positioned in a staggered arrangement to terminate defects of the group III-Nitride or II-VI wurtzite layer. Other embodiments may be described and/or claimed.

Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.