A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

A surface treating method and apparatus include operating a quasi-continuous wave fiber laser and pre-scan shaping the laser beam such that an instantaneous spot beam has predetermined geometrical dimensions, intensity profile, and power; operating a scanner at an optimal angular velocity and angular range to divide the pre-scan beam into a plurality of sub-beams deflected towards the surface being processed; guiding the sub-beams through a post-scan optical assembly to provide the spot beam with predetermined geometrical dimensions, power, and angular velocity and range, which are selected such that the instantaneous spot beam is dragged in a scan direction over a desired length at a desired scan velocity, which allow the treated surface to be exposed for a predetermined exposure duration and have a predetermined fluence distribution providing the treated surface with a quality comparable to that of the surface processed by an excimer laser or a burst-mode fiber laser.

Methods for low-temperature formation of one or more thin-film semiconductor structures on a substrate that include the steps of, forming a (poly)silane layer over a substrate, transforming one or more parts of the (poly)silane layer in one or more thin-film solid-state semiconductor structures, by exposing the one or more parts with light from an

Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.

The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low temperature polycrystalline silicon includes forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions.

To provide a laser annealing apparatus which is high efficiency of irradiation energy and capable of achieving uniformity in density of irradiation energy in a region irradiated with a laser beam.

SOLVING MEANS

Scheduled treatment regions of a treatment film are each defined in the form of a strip extending in a scanning direction. Irradiation surface areas of line beams are oriented to be inclined relative to the scanning direction within respective scheduled treatment regions.

A method of manufacturing a low temperature polysilicon thin film, including the steps of: forming a buffer layer on a substrate; forming a silicon layer on the buffer layer; roughening a surface of the silicon layer to form an uneven surface as a recrystallization growth space; and annealing the silicon layer to form a polysilicon layer, and a partial silicon material of the polysilicon layer is formed on the recrystallization growth space.