There is provided a plasma annealing device that can change the crystal structure of a film by processing the film (coating) on a substrate and that has excellent productivity. A method for producing a film includes step (A) irradiating a film on a substrate with atmospheric pressure plasma, wherein the crystal structure of a constituent of the film is changed. The step (A) may include generating plasma under atmospheric pressure by energization at a frequency of 10 hertz to 100 megahertz and a voltage of 60 volts to 1,000,000 volts, and directly irradiating the film on the substrate with the generated plasma. A method for changing a crystal structure of a constituent of a film includes step (A). A plasma generation device used in step (A). An electronic device produced through step (A).

A semiconductor review tool receives absolute Z-height values for the semiconductor wafer, such as a semiconductor wafer with a beveled edge. The absolute Z-height values can be determined by a semiconductor inspection tool. The semiconductor review tool reviews the semiconductor wafer within a Z-height based on the absolute Z-height values. Focus can be adjusted to within the Z-height.

Method for making a strained silicon structure, wherein a silicon germanium layer is formed on the silicon layer, followed by another layer with a lower concentration of germanium before selective amorphisation of the silicon and silicon germanium layer relative to this other layer before the assembly is recrystallised so as to strain the silicon semiconducting layer.

A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.

Provided is a method of producing an epitaxial silicon wafer having high gettering capability resulting in even more reduced white spot defects in a back-illuminated solid-state imaging device. The method includes: a first step of irradiating a surface of a silicon wafer with cluster ions of C.sub.nH.sub.m (n=1 or 2, m=1, 2, 3, 4, or 5) generated using a Bernas ion source or an IHC ion source, thereby forming, in the silicon wafer, a modifying layer containing, as a solid solution, carbon and hydrogen that are constituent elements of the cluster ions; and a subsequent second step of forming a silicon epitaxial layer on the surface. In the first step, peaks of concentration profiles of carbon and hydrogen in the depth direction of the modifying layer are made to lie in a range of more than 150 nm and 2000 nm or less from the surface.

A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.

2D heterostructures comprising Bi.sub.2Se.sub.3/MoS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2, Bi.sub.2Se.sub.3/WS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2. .sub.2xS.sub.2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.

A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

A heterojunction device is provided. The heterojunction device includes a silicon (Si) substrate; and a film of silicon carbide (SiC) deposited on a surface of the Si substrate. The SiC has a Si:C ratio that increases or decreases from a SiC surface in contact with the Si substrate to an opposing SiC surface that is not in contact with the Si substrate.

Provided is a method of producing an epitaxial silicon wafer having high gettering capability resulting in even more reduced white spot defects in a back-illuminated solid-state imaging device. The method includes: a first step of irradiating a surface of a silicon wafer with cluster ions of C.sub.nH.sub.m (n=1 or 2, m=1, 2, 3, 4, or 5) generated using a Bernas ion source or an IHC ion source, thereby forming, in the silicon wafer, a modifying layer containing, as a solid solution, carbon and hydrogen that are constituent elements of the cluster ions; and a subsequent second step of forming a silicon epitaxial layer on the surface. In the first step, peaks of concentration profiles of carbon and hydrogen in the depth direction of the modifying layer are made to lie in a range of more than 150 nm and 2000 nm or less from the surface.