Semiconductor processing methods are described that include providing a substrate to a reaction chamber, where the substrate includes substrate trenches that have a top surface and a bottom surface. A deposition gas that includes a carbon-containing gas and a nitrogen-containing gas flows into a plasma excitation region of the reaction chamber. A deposition plasma having an electron temperature less than or about 4 eV is generated from the deposition gas. The methods further include depositing a carbon-containing layer on the top surface and the bottom surface of the substrate trenches, where the as-deposited carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1. Also described are semiconductor structures that include an as-deposited carbon-containing layer on the top and bottom surface of at least a first and second trench, where the carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1.

A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

Apparatuses and methods are described. An apparatus may include a processing chamber including chamber walls, a chamber heater configured to heat the walls, a pedestal positioned within the chamber and including a substrate heater having a plurality of light emitting diodes (LEDs) configured to emit light with wavelengths in the range of 400 nanometers (nm) and 800 nm, a window positioned above the heater and having a material transparent to light with wavelengths in the range of 400 nm and 800 nm, and three or more substrate supports, each having a substrate support surface vertically offset from the window and configured to support a substrate such that the window and the substrate are offset by a nonzero distance.

A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.

The inventive concept provides a substrate treating apparatus. In an embodiment, the substrate treating apparatus includes a housing having a treatment space for treating a substrate in an interior thereof, a support unit that supports the substrate in the treatment space, a nozzle that supplies a liquid to the substrate positioned on the support unit, a liquid supply unit that supplies the liquid to the nozzle, and a controller that controls the liquid unit, the liquid supply unit includes a tank having an interior space for storing the liquid, and a first circulation line that circulates the liquid stored in the interior space and in which a first heater is installed, and the controller controls the first heater such that the first heater heats the liquid to a first temperature, at which particles in the interior of the liquid are not eluted.

A radiation source arrangement causes interaction between pump radiation (340) and a gaseous medium (406) to generate EUV or soft x-ray radiation by higher harmonic generation (HHG). The operating condition of the radiation source arrangement is monitored by detecting (420/430) third radiation (422) resulting from an interaction between condition sensing radiation and the medium. The condition sensing radiation (740) may be the same as the first radiation or it may be separately applied. The third radiation may be for example a portion of the condition sensing radiation that is reflected or scattered by a vacuum-gas boundary, or it may be lower harmonics of the HHG process, or fluorescence, or scattered. The sensor may include one or more image detectors so that spatial distribution of intensity and/or the angular distribution of the third radiation may be analyzed. Feedback control based on the determined operating condition stabilizes operation of the HHG source.

A method for manufacturing an electronic device includes at least a step (1) of preparing a structure comprising (i) an adhesive film provided with a base material layer, an adhesive resin layer (A) provided on a first surface side of the base material layer, and an adhesive resin layer (B) provided on a second surface side of the base material layer, (ii) an electronic component attached to the adhesive resin layer (A) of the adhesive film, and (iii) a support substrate attached to the adhesive resin layer (B) of the adhesive film; a step (2) of sealing the electronic component with a sealing material; a step (3) of peeling the support substrate from the structure by reducing an adhesive force of the adhesive resin layer (B) by applying an external stimulus; and a step (4) of peeling the adhesive film from the electronic component.

Implementations of a method for healing a crack in a semiconductor substrate may include identifying a crack in a semiconductor substrate and heating an area of the semiconductor substrate including the crack until the crack is healed.

Methods and equipment for the removal of semiconductor wafers grown on the top surface of a single crystal silicon substrate covered by a porous silicon separation layer by using IR irradiation of the porous silicon separation layer to initiate release of the semiconductor wafer from the substrate, particularly at edges (and corners) of the top surface of the substrate.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.