A semiconductor structure and a forming method thereof are provided. The forming method of the semiconductor structure comprises: providing a substrate comprising a first area for forming a P-channel Metal Oxide Semiconductor (PMOS) transistor and a second area for forming an N-channel Metal Oxide Semiconductor (NMOS) transistor; forming a channel layer on the surface of the first area of the substrate; adjusting the oxidation rate of the channel layer to reduce the difference between the oxidation rate of the channel layer and the oxidation rate of the substrate; and oxidizing the surfaces of the channel layer and the second area of the substrate to form a first transition oxide layer covering the surface of the channel layer and a second transition oxide layer covering the surface of the second area of the substrate.

Embodiments relate to a semiconductor structure and a fabrication method thereof. The semiconductor structure includes: a semiconductor substrate; a dielectric layer positioned on the semiconductor substrate; and a gate structure, including a bandgap-tunable material layer. The bandgap-tunable material layer is positioned on the dielectric layer, a Fermi level of the bandgap-tunable material layer shifts to a conduction band when electrons inflow, and the Fermi level of the bandgap-tunable material layer shifts to a valence band when the electrons outflow. The semiconductor structure and the fabrication method thereof can effectively reduce fabrication difficulty of the gate structure.

Disclosed are a layer structure including a metal layer and a carbon layer, a manufacturing method the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure according to an embodiment includes an insulating layer on one surface of a semiconductor layer, a first metal layer facing the semiconductor layer with the insulating layer therebetween, a conductive first carbon layer arranged between the insulating layer and the first metal layer, the conductive first carbon layer being in contact with a first surface of the first metal layer. The first metal layer may be provided above or below the semiconductor layer. The first carbon layer may include a graphene layer. The first carbon layer may extend to another surface of the first metal layer.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The method includes: preparing a semiconductor substrate; sequentially forming an oxide layer and a sacrificial layer on the semiconductor substrate, the thickness of the oxide layer is a first thickness; forming a plurality of trenches in the semiconductor substrate, wherein the trenches extending from the sacrificial layer into the semiconductor substrate; forming an isolation dielectric layer on the plurality of trenches and the sacrificial layer, and removing the isolation dielectric layer on the sacrificial layer to form a plurality of isolation structures; forming a well region in the semiconductor substrate; processing the oxide layer by an etching process, so that the thickness of the oxide layer is equal to a second thickness, the first thickness is greater than the second thickness; and forming a polysilicon gate on the etched oxide layer.

A semiconductor device includes a first source/drain region and a second source/drain region disposed in a semiconductor substrate. The semiconductor device also includes a word line structure disposed in the semiconductor substrate and between the first source/drain region and the second source/drain region. The word line structure includes a composite gate dielectric, and a lower electrode layer disposed over the composite gate dielectric. The word line structure also includes an upper electrode layer disposed over the lower electrode layer, and a graphene layer disposed between the lower electrode layer and the upper electrode layer. The composite gate dielectric includes a gate dielectric layer and a protection liner.

In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.