In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.

A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.

A method for forming a semiconductor structure is provided. The method includes: providing a substrate; forming a groove in the substrate, in which a side wall of the groove is formed by sequential connection of a plurality of pits recessed into the substrate; forming a first material in the groove, in which the pits are completely filled with the first material; and exposing and developing the first material in the groove to obtain a through via structure.

Aspects of this disclosure relate to selective removal of material of a layer, such as a carbon-containing layer. The layer can be over a patterned structure of two different materials. Treating the layer to cause the removal agent to be catalytically activated by a first area of the patterned structure to remove material of the organic material over the first area at a greater rate than over a second area of the patterned structure having a different composition from the first area.

A protective film forming agent that, in dicing of a semiconductor wafer, is used to form a protective film on the surface of the semiconductor wafer, can form a protective film that has excellent laser processability, and has excellent solubility of a light-absorbing agent; and a method for producing a semiconductor chip using the protective film forming agent. The protective film forming agent includes a water-soluble resin, a light-absorbing agent, a basic compound, and a solvent. The basic compound is an alkylamine, an alkanolamine, an imidazole compound, ammonia, or an alkali metal hydroxide. The light-absorbing agent content of the protective film forming agent is 0.1-10 mass % (inclusive).

The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, portions of an adhesion layer, barrier layer and/or seed layer is protected by a layer of an organic mask material as portions of the adhesion layer, barrier layer and/or seed layer are removed. The layer of organic mask material is modified to improve its resistance to penetration by wet etchants used to remove exposed portions of the adhesion layer, barrier layer and/or seed layer. An example modification includes treating the layer of organic mask material with a surfactant that is absorbed into the layer of organic mask material.

There is provided a protective film agent with which a workpiece is coated when the workpiece is processed. The protective film agent includes a water-soluble resin, a light absorbing agent having a flavone structure, a flavonol structure, or an isoflavone structure, and a solvent that dissolves the resin and the light absorbing agent.

A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.

Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving the remaining SRP intact. The exposure and removal cycles are repeated.

An element chip manufacturing method including: attaching a substrate via a die attach film (DAF) to a holding sheet; forming a protective film that covers the substrate; forming an opening in the protective film with a laser beam, to expose the substrate in the dicing region therefrom; exposing the substrate to a first plasma to etch the substrate exposed from the opening, so that a plurality of element chips are formed from the substrate and so that the DAF is exposed from the opening; exposing the substrate to a second plasma to etch the die attach film exposed from the opening, so that the DAF is split so as to correspond to the element chips; and detaching the element chips from the holding sheet, together with the split DAF. The DAF is larger than the substrate. The method includes irradiating the laser beam to the DAF protruding from the substrate.