Stacked die assemblies having a moisture sealant layer according to embodiments are described herein. A microelectronic package structure having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die adjacent sidewalls of the second and the third dies, and adjacent an edge portion of the first die. The first layer comprises a diffusion barrier material A second layer is over the first layer, the second layer, wherein a top surface of the second layer is substantially coplanar with the top surfaces of the second and third dies. The first layer provides a hermetic moisture sealant layer for stacked die package structures.

A method for bonding a fluid to a substance includes filling a first pressure vessel with the fluid and pressurizing the first pressure vessel to a first pressure. The fluid is the circulated through an electric arc formed within the first pressure vessel, thereby creating a treated fluid. Within a second pressure vessel, the substance is exposed to a magnetic field, thereby forming a polarized substance. The treated fluid and polarized substance are combined under a second pressure within a third pressure vessel, thereby exposing the treated fluid to the polarized substance at a pressure sufficient to achieve a bond.

A method for bonding a fluid to a substance includes filling a first pressure vessel with the fluid and pressurizing the first pressure vessel to a first pressure. The fluid is the circulated through an electric arc formed within the first pressure vessel, thereby creating a treated fluid. Within a second pressure vessel, the substance is exposed to a magnetic field, thereby forming a polarized substance. The treated fluid and polarized substance are combined under a second pressure within a third pressure vessel, thereby exposing the treated fluid to the polarized substance at a pressure sufficient to achieve a bond.

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate layer, a low-doping semiconductor layer, a crystalline ferroelectric layer and source and drain terminals. The crystalline ferroelectric layer is disposed between the gate layer and the low-doping semiconductor layer. The source terminal and the drain terminal are disposed on the low-doping semiconductor layer.

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate layer, a low-doping semiconductor layer, a crystalline ferroelectric layer and source and drain terminals. The crystalline ferroelectric layer is disposed between the gate layer and the low-doping semiconductor layer. The source terminal and the drain terminal are disposed on the low-doping semiconductor layer.

This patent application relates to methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices with heat applied from a bond head of a thermocompression bonding tool. The stack is substantially enclosed within a skirt carried by the bond head to reduce heat loss and contaminants from the stack, and heat may be added from the skirt.

This patent application relates to methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices with heat applied from a bond head of a thermocompression bonding tool. The stack is substantially enclosed within a skirt carried by the bond head to reduce heat loss and contaminants from the stack, and heat may be added from the skirt.

The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.