Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

Provided is a technique suitable for multilayering thin semiconductor elements via adhesive bonding while avoiding wafer damage in a method of manufacturing a semiconductor device, the method in which semiconductor elements are multilayered through laminating wafers in which the semiconductor elements are fabricated. The method of the present invention includes bonding and removing. In the bonding step, a back surface 1b side of a thinned wafer 1T in a reinforced wafer 1R having a laminated structure including a supporting substrate S, a temporary adhesive layer 2, and the thinned wafer 1T is bonded via an adhesive to an element forming surface 3a of a wafer 3. A temporary adhesive for forming the temporary adhesive layer 2 contains a polyvalent vinyl ether compound, a compound having two or more hydroxy groups or carboxy groups and thus capable of forming a polymer with the polyvalent vinyl ether compound, and a thermoplastic resin. The adhesive contains a polymerizable group-containing polyorganosilsesquioxane. In the removing step, a temporary adhesion by the temporary adhesive layer 2 between the supporting substrate S and the thinned wafer 1T is released to remove the supporting substrate S.

A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

A method of splitting off a semiconductor wafer from a semiconductor bottle includes: forming a separation region within the semiconductor boule, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor boule; and applying an external force to the semiconductor boule such that at least one crack propagates along the separation region and a wafer splits from the semiconductor boule.

A device configured for a laser treatment, including a support and objects, each attached to the support via a region absorbing for the laser, the support comprising a system for optically guiding (42, 44, 50, 52) the laser towards at least a plurality of said absorbing regions.

A manufacturing method for a semiconductor element includes a step of forming a mask partly having an opening and configured to cover a surface of a base substrate, and a step of forming a semiconductor layer containing a predetermined semiconductor material by inducing epitaxial growth along the mask from the surface of the base substrate exposed from an opening. A surface on the side closer to the semiconductor layer in the mask is formed of an amorphous first material that does not contain an element to serve as a donor or an acceptor in the predetermined semiconductor material.

A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.

A semiconductor device includes a plurality of column portions including a semiconductor. The plurality of column portions each includes a source region, a drain region, and a channel formation region including a channel formed between the source region and the drain region. The semiconductor device further includes a gate electrode provided, via an insulating layer, at a side wall of the channel formation region, and also includes a first semiconductor layer provided at a side wall of the drain region. A conductive type of the first semiconductor layer differs from a conductive type of the semiconductor included in the drain region.

A method for transferring a thin layer onto a destination substrate having a face with an adhesive layer includes formation of a polymer material interface layer on a second face of a thin layer, opposite a first face on which an adhesive is present. The method also includes assembly by gluing the interface layer and the adhesive layer and separation of the thin layer relative to a temporary support.