A workpiece unit that includes a workpiece, a tape stuck to the workpiece; and an annular frame to which an outer circumferential edge of the tape is stuck and which has an opening defined centrally therein. The workpiece is disposed in the opening in the annular frame and supported on the annular frame by the tape, and at least one of the tape and the annular frame has an irreversible discoloring section that discolors in response to an external stimulus. Such a configuration makes it possible to determine whether or not a process involving an external stimulus has been carried out on the workpiece unit, based on the appearance of the workpiece unit (i.e., based on whether the irreversible discoloring section has been discolored or not).

A hybrid die bonding method includes the following steps: dicing a wafer into a plurality of dies arranged on a plurality of target blocks of a carrier film, wherein surfaces of each of the dies having no solder and bump; cleaning particulate from first surfaces of the dies; separating sides and corners of second surfaces of the dies from the target blocks; turning the carrier film and transferring the dies to a first carrier, wherein the first surfaces of the dies contact the first carrier; removing the carrier film from the second surfaces of the dies; cleaning particulate from the second surfaces of the dies; and transferring the dies from the first carrier to a substrate, wherein a surface of the substrate having no solder and bump. As such, the method reduces the adhesive force between the dies and the carrier film.

In a pickup apparatus of a semiconductor die, a suction surface sucking a wafer sheet is a curved surface which is curved convexly upward, and after raising a stage to push up the wafer sheet, a control part creates a vacuum inside the stage to suck the wafer sheet to the suction surface, and after sucking the wafer sheet to the suction surface, the control part protrudes a moving element from the suction surface, and picks up a semiconductor die from the wafer sheet by a collet.

The present invention provides a semiconductor chip delamination device for peeling off a protective film attached to one surface of a semiconductor chip, including: a stage unit (400) configured to allow a ring frame, in which the semiconductor chip having the protective film attached thereto is disposed, to be seated thereon; a delamination feeding unit (300) configured to feed a delamination seal contactable with the protective film so as to peel off the protective film from the semiconductor chip; a covering unit (500, 600) configured to allow the delamination seal to cover the semiconductor chip such that the delamination seal comes into close contact with the protective film; and a delaminating unit (700) configured to peel off, from the semiconductor chip, the delamination seal disposed to cover the semiconductor chip having the protective film disposed on one surface thereof, and provides a method of controlling the semiconductor chip delamination device.

A composition exhibits excellent heat resistance and mounting reliability when bonding a semiconductor power element to a metal lead frame, which is also free of lead and thereby places little burden on the environment. An electrically conductive composition contains at least a sulfide compound represented by R—S—R′ (wherein R is an organic group containing at least carbon; R′ is an organic group that is the same as or different from R; and R and R′ may be bonded to each other to form a so-called cyclic sulfide) and metal particles containing at least Cu, Sn or Ni as its essential component. Further, a conductive paste and a conductive bonding film each are produced using the electrically conductive composition. A dicing die bonding film is obtained by bonding the conductive bonding film with an adhesive tape.

A yield in a separation process is improved. A separation apparatus which enables easy separation in a large-area substrate is provided. The separation apparatus has a function of dividing a process member into a first member and a second member and includes a support body supply unit, a support body hold unit, a transfer mechanism, a direction changing mechanism, and a structure body. The structure body bonds a support body to a surface of the first member. When at least part of the process member is located between the direction changing mechanism and the structure body or the pressure applying mechanism, the shortest distance between the direction changing mechanism and a first plane including the surface of the first member is longer than the shortest distance between the first plane and the structure body or the pressure applying mechanism.

According to one embodiment, in a semiconductor device, a first film is arranged on a side of a main surface of the substrate. A second film is arranged on an opposite side of the substrate with the first film interposed therebetween. A main surface of the second film is in contact with a main surface of the first film. A third film is arranged on an opposite side of the first film with the second film interposed therebetween. A main surface on a side of the substrate of the third film has two-dimensionally-distributed protrusions or recesses. A main surface on an opposite side of the substrate of the third film is flat. Absorptance of infrared light of the second film is higher than absorptance of the infrared light of the third film. Thermal expansion coefficient of the third film is different from thermal expansion coefficient of the second film.

A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, the optical device layer being formed on the front side of an epitaxy substrate through a buffer layer. A transfer substrate is bonded through a bonding layer to the front side of the optical device layer of the optical device wafer, thereby forming a composite substrate. A pulsed laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer is applied from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer, and the epitaxy substrate is peeled from the optical device layer, thereby transferring the optical device layer to the transfer substrate. Ultrasonic vibration is applied to the composite substrate in transferring the optical device layer.

A delamination method for delaminating a laminated substrate which includes a first and a second substrates bonded to each other, includes: adjusting a position of the laminated substrate at a holding unit by a position adjusting unit and disposing the holding unit at a predetermined height position; disposing a sharp member of a delamination inducing unit at a predetermined height position; detecting a contact of the sharp member by bringing the sharp member into contact with a side surface of one end portion of the laminated substrate; inserting the sharp member into the side surface of the one end portion of the laminated substrate; and delaminating the second substrate from the first substrate by a plurality of suction movement units which sucks the second substrate of the laminated substrate to move the second substrate away from the first substrate.

A method of separating a support substrate and a wafer adhered to the support substrate includes inserting a trigger member into a space between the support substrate and the wafer. The space opens on a gap region of the support substrate. The gap region is within an outer periphery of a base member of the support substrate. The base member has an adhesive layer contacting the wafer. The adhesive layer does not extend to an edge of the base member facing the gap region at the space. The wafer and the base member are contacted by the trigger member which promotes separation of the wafer and the support substrate from each other.