Embodiments disclosed herein include an electronics package comprising stacked dies. In an embodiment, the electronics package comprises a first die that includes a plurality of first conductive interconnects extending out from a first surface of the first die. In an embodiment, the first die further comprises a keep out zone. In an embodiment, the electronic package may also comprise a second die. In an embodiment, the second die is positioned entirely within a perimeter of the keep out zone of the first die. In an embodiment, a first surface of the second die faces the first surface of the first die.

Embodiments disclosed herein include an electronics package comprising stacked dies. In an embodiment, the electronics package comprises a first die that includes a plurality of first conductive interconnects extending out from a first surface of the first die. In an embodiment, the first die further comprises a keep out zone. In an embodiment, the electronic package may also comprise a second die. In an embodiment, the second die is positioned entirely within a perimeter of the keep out zone of the first die. In an embodiment, a first surface of the second die faces the first surface of the first die.

A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures.

A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures.

Provided is a method for manufacturing a conductive pillar capable of bonding a substrate and a bonding member with high bonding strength via a bonding layer without employing an electroplating method, and a method for manufacturing a bonded structure by employing this method. A method for manufacturing a conductive pillar 1 includes, in sequence, the steps of forming a resist layer 16 on a substrate 11 provided with an electrode pad 13, the resist layer 16 including an opening portion 16a on the electrode pad 13, forming a thin Cu film 17 by sputtering or evaporating Cu on a surface of the substrate 11 provided with the resist layer 16 including the opening portion 16a, filling the opening portion 16a with a fine particle copper paste 12c, and sintering the fine particle copper paste 12c by heating the substrate 11 filled with the fine particle copper paste 12c.

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.

An electrical connecting structure and a method for manufacturing the same are disclosed. The electrical connecting structure comprises: a first substrate; a second substrate; and an interconnect element disposed between the first substrate and the second substrate, wherein the interconnect element has a width, and no joint surface is present in the interconnect element in a range of 50% or more of the width.

An electronic package and method includes a substrate including a plurality of pads on a major surface. An electronic component including a plurality of pads on a major surface facing the major surface of the substrate. A stud bump electrically couples one of the plurality of pads of the substrate to one of the plurality of pads of the electronic component.

An electronic package and method includes a substrate including a plurality of pads on a major surface. An electronic component including a plurality of pads on a major surface facing the major surface of the substrate. A stud bump electrically couples one of the plurality of pads of the substrate to one of the plurality of pads of the electronic component.

A display device comprises a display panel substrate and a glass substrate over said display panel substrate, wherein said display panel substrate comprises multiple contact pads, a display area, a first boundary, a second boundary, a third boundary and a fourth boundary, wherein said display area comprises a first edge, a second edge, a third edge and a fourth edge, wherein said first boundary is parallel to said third boundary and said first and third edges, wherein said second boundary is parallel to said fourth boundary and said second and fourth edges, wherein a first least distance between said first boundary and said first edge, wherein a second least distance between said second boundary and said second edge, a third least distance between said third boundary and said third edge, a fourth distance between said fourth boundary and said fourth edge, and wherein said first, second, third and fourth least distances are smaller than 100 micrometers, and wherein said glass substrate comprising multiple metal conductors through in said glass substrate and multiple metal bumps are between said glass substrate and said display panel substrate, wherein said one of said metal conductors is connected to one of said contact pads through one of said metal bumps.