A method of soldering includes providing a substrate having a first metal joining surface, providing a semiconductor die having a second metal joining surface, providing a solder preform having a first interface surface and a second interface surface, arranging the solder preform between the substrate and the semiconductor die such that the first interface surface faces the first metal joining surface and such that the second interface surface faces the second metal joining surface, and performing a mechanical pressure-free diffusion soldering process that forms a soldered joint between the substrate and the semiconductor die by melting the solder preform and forming intermetallic phases in the solder. One or both of the first interface surface and the second interface surface has a varying surface profile that creates voids between the solder preform and one or both of the substrate and the semiconductor die before the melting of the solder preform.

Process for manufacturing a chip-card module. It includes one or more operations in which a meltable solder is deposited on connection pads formed in a layer of electrically conductive material located on the back side of a dielectric substrate, and at least one electronic component is connected to these connection pads by reflowing the solder. Chip-card module obtained using this process. Chip card including such a module.

Photonic devices include a photonic assembly and a substrate coupled to the photonic assembly. The photonic assembly includes a photonic die and an optical device coupled to the photonic die with an adhesive to form an optical connection between the optical device and the photonic die. The photonic assembly is coupled to the photonic assembly by reflowing a plurality of solder connections at temperature that is less than a cure temperature of the adhesive.

A method of soldering includes providing a substrate having a first metal joining surface, providing a semiconductor die having a second metal joining surface, providing a solder preform having a first interface surface and a second interface surface, arranging the solder preform between the substrate and the semiconductor die such that the first interface surface faces the first metal joining surface and such that the second interface surface faces the second metal joining surface, and performing a mechanical pressure-free diffusion soldering process that forms a soldered joint between the substrate and the semiconductor die by melting the solder preform and forming intermetallic phases in the solder. One or both of the first interface surface and the second interface surface has a varying surface profile that creates voids between the solder preform and one or both of the substrate and the semiconductor die before the melting of the solder preform.

Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode.

Provided are a hybrid bonding structure, a solder paste composition, a semiconductor device, and a method of manufacturing the semiconductor device. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste includes a transient liquid phase. The transient liquid phase includes a core and a shell on a surface of the core. A melting point of the shell may be lower than a melting point of the core. The core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.

Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.

Photonic devices include a photonic assembly and a substrate coupled to the photonic assembly. The photonic assembly includes a photonic die and an optical device coupled to the photonic die with an adhesive to form an optical connection between the optical device and the photonic die. The photonic assembly is coupled to the photonic assembly by reflowing a plurality of solder connections at temperature that is less than a cure temperature of the adhesive.

Disclosed herein are embodiments of lead-free (Pb-free) or lead-bearing solder column devices that can include an inner core, an outer sleeve surrounding a portion of the inner core, at least one space along a length of the outer sleeve, and a second layer including a solder material coupled with a portion of the inner core within the at least one space. The inner core can be configured to support the solder column so as to prevent a collapse of the solder column at temperatures above a liquidus temperature of the outer sleeve's solder material and the second layer's solder material. The column serves as a heat-sink to conduct excessive heat away from a heat generating semiconductor chip. Moreover, the compliant solder column absorbs strain and mechanical stress caused by a difference in the coefficient of thermal expansion (CTE) connecting the semiconductor chip to a printed circuit board (PCB).

Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode.