Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/01
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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H01L2224/10
Bump connectors; Manufacturing methods related thereto
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H01L2224/12
Structure, shape, material or disposition of the bump connectors prior to the connecting process
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H01L2224/13
of an individual bump connector
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H01L2224/13001
Core members of the bump connector
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H01L2224/13198
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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H01L2224/132
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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H01L2224/13263
the principal constituent melting at a temperature of greater than 1550°C
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H01L2224/13264
Palladium [Pd] as principal constituent
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H01L2224/13264

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
20230215830 · 2023-07-06 · ·

When a semiconductor element and a wiring board are connected to each other, connection at a minute pitch is performed while securing reliability.

In a semiconductor device, a semiconductor element and a wiring board are connected to each other. A bump is formed on an electrode in either the semiconductor element or the wiring board. This bump contains metal nanoparticles as a component. The bump may be formed by sintering the metal nanoparticles that are applied. Furthermore, the metal nanoparticles may be applied and sintered a plurality of times to form a plurality of layers. A connection between the semiconductor element and the wiring board may be formed by sintering the other metal nanoparticles that are applied.