A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

An apparatus includes an Integrated Circuit (IC). A first pillar includes a first end and a second end. The first end is connected to the IC and the second end includes a first attachment point collinear with a first central axis of the first pillar. The first attachment point includes a first solder volume capacity. A second pillar includes a third end and a fourth end. The third end is connected to the IC and the fourth end includes a second attachment point disposed on a side of the second pillar facing the first pillar. The second attachment point includes a second solder volume capacity being less than the first solder volume capacity. A first distance between the first end and the second end is less than a second distance between the third end and the fourth end.

An apparatus includes an Integrated Circuit (IC). A first pillar includes a first end and a second end. The first end is connected to the IC and the second end includes a first attachment point collinear with a first central axis of the first pillar. The first attachment point includes a first solder volume capacity. A second pillar includes a third end and a fourth end. The third end is connected to the IC and the fourth end includes a second attachment point disposed on a side of the second pillar facing the first pillar. The second attachment point includes a second solder volume capacity being less than the first solder volume capacity. A first distance between the first end and the second end is less than a second distance between the third end and the fourth end.

An integrated circuit device may include a multi-material toothed bond pad including (a) an array of vertically-extending teeth formed from a first material, e.g., aluminum, and (b) a fill material, e.g., silver, at least partially filling voids between the array of teeth. The teeth may be formed by depositing and etching aluminum or other suitable material, and the fill material may be deposited over the array of teeth and extending down into the voids between the teeth, and etched to expose top surfaces of the teeth. The array of teeth may collectively define an abrasive structure. The multi-material toothed bond pad may be bonded to another bond pad, e.g., using an ultrasonic or thermosonic bonding process, during which the abrasive teeth may abrade, break, or remove unwanted native oxide layers formed on the respective bond pad surfaces, to thereby create a direct and/or eutectic bonding between the bond pads.

An integrated circuit device may include a multi-material toothed bond pad including (a) an array of vertically-extending teeth formed from a first material, e.g., aluminum, and (b) a fill material, e.g., silver, at least partially filling voids between the array of teeth. The teeth may be formed by depositing and etching aluminum or other suitable material, and the fill material may be deposited over the array of teeth and extending down into the voids between the teeth, and etched to expose top surfaces of the teeth. The array of teeth may collectively define an abrasive structure. The multi-material toothed bond pad may be bonded to another bond pad, e.g., using an ultrasonic or thermosonic bonding process, during which the abrasive teeth may abrade, break, or remove unwanted native oxide layers formed on the respective bond pad surfaces, to thereby create a direct and/or eutectic bonding between the bond pads.

A semiconductor-mounted product includes a semiconductor package, a wiring substrate, four or more soldered portions, and a resin-reinforced portion. Each of the soldered portions electrically connects the semiconductor package to the wiring of the wiring substrate. The resin-reinforced portion is formed on a side surface of each of the soldered portions. Each of the soldered portions has a first solder region formed closer to the semiconductor package than the wiring substrate and a second solder region formed closer to the wiring substrate than the semiconductor package. A proportion of a void present in a polygon connecting centers of soldered portions located at outermost positions among the soldered portions to a sum of the void and the resin-reinforced portion is from 10% to 99%, inclusive.

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

An integrated circuit device may include a multi-material toothed bond pad including (a) an array of vertically-extending teeth formed from a first material, e.g., aluminum, and (b) a fill material, e.g., silver, at least partially filling voids between the array of teeth. The teeth may be formed by depositing and etching aluminum or other suitable material, and the fill material may be deposited over the array of teeth and extending down into the voids between the teeth, and etched to expose top surfaces of the teeth. The array of teeth may collectively define an abrasive structure. The multi-material toothed bond pad may be bonded to another bond pad, e.g., using an ultrasonic or thermosonic bonding process, during which the abrasive teeth may abrade, break, or remove unwanted native oxide layers formed on the respective bond pad surfaces, to thereby create a direct and/or eutectic bonding between the bond pads.

A technique for fabricating bumps on a substrate is disclosed. A substrate that includes a set of pads formed on a surface thereof is prepared. A bump base is formed on each pad of the substrate. Each bump base has a tip extending outwardly from the corresponding pad. A resist layer is patterned on the substrate to have a set of holes through the resist layer. Each hole is aligned with the corresponding pad and having space configured to surround the tip of the bump base formed on the corresponding pad. The set of the holes in the resist layer is filled with conductive material to form a set of bumps on the substrate. The resist layer is stripped from the substrate with leaving the set of the bumps.

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.