An electronic device and a method for manufacturing the same are provided. The electronic device includes: a first insulating layer; a first metal bump disposed on the first insulating layer; and a second insulating layer disposed on the first metal bump, wherein the second insulating layer includes a first opening exposing a portion of the first metal bump, wherein a thickness of the first insulating layer is greater than a thickness of the second insulating layer.

A semiconductor integrated circuit chip, in which multi-core processors are integrated, is usually mounted over an organic wiring board by FC bonding to form a BGA package by being integrated with the substrate. In such a structure, power consumption is increased, and hence the power supplied only from a peripheral portion of the chip is insufficient, so that a power supply pad is also provided in the chip central portion. However, because of an increase in the wiring associated with the integration of a plurality of CPU cores, etc., there occurs a portion between the peripheral portion and the central portion of the chip, where a power supply pad cannot be arranged. According to the outline of the present application, in a semiconductor integrated circuit device such as a BGA, etc., in which a semiconductor chip is mounted over an interposer, such as a multilayer organic wiring board, in a face-up manner, a first group of metal through electrodes, which are provided in the semiconductor chip to supply a power supply potential to a core circuit, etc., and a first metal land over the interposer are interconnected by a first conductive adhesive member film.

A fan-out wafer level package is disclosed, which includes: a redistribution layer; a semiconductor chip electrically connected with the redistribution layer through a bump; a protective member protecting the semiconductor chip, wherein a part of the protective member is removed such that the upper surface of the semiconductor chip is exposed in order to dissipate heat and prevent warpage; and an interconnector disposed outside the semiconductor chip at substantially the same level and having a lower part electrically connected with the redistribution layer and an upper part not being covered with the protective member, wherein the interconnector includes a metal core solder ball, the metal core solder ball includes a metal core and a solder buffer between the metal core and the protective member, and the metal core is formed of a combination of copper (Cu), nickel (Ni), and silver (Ag).

A conductive ball includes a copper ball, a nickel layer formed with being patterned on an outer surface of the copper ball, and a tin-based solder covering each outer surface of the copper ball and the nickel layer.

A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.

Provided is an electronic device including a display panel including pixels, and first pads respectively including pad parts which are disposed in one direction and respectively electrically connected to the pixels, and conductive members electrically connected to the pad parts, a circuit board including second pads disposed in the one direction and respectively electrically connected to the first pads, and an adhesive layer disposed between the display panel and the circuit board. The conductive members each include a first member disposed on the pad part and having an insulation property, a second member covering the first member and connected to the pad part, and a third member disposed on the second member while exposing a portion of the second member and including a material different from a material of the second member.

A conductive ball includes a copper ball, a nickel layer formed with being patterned on an outer surface of the copper ball, and a tin-based solder covering each outer surface of the copper ball and the nickel layer.

fan-out wafer level package is disclosed, which comprises: a redistribution layer; a semiconductor chip electrically connected with the redistribution layer through a bump; a protective member protecting the semiconductor chip, wherein a part of the protective member is removed such that the upper surface of the semiconductor chip is exposed in order to dissipate heat and prevent warpage; and an interconnector disposed outside the semiconductor chip at substantially the same level and having a lower part electrically connected with the redistribution layer and an upper part not being covered with the protective member, wherein the interconnector includes a metal core solder ball, the metal core solder ball includes a metal core and a solder buffer between the metal core and the protective member, and the metal core is formed of a combination of copper (Cu), nickel (Ni), and silver (Ag).

A method includes forming a plurality of metal posts. The plurality of metal posts is interconnected to form a metal-post row by weak portions between neighboring ones of the plurality of metal posts. The weak portions include a same metal as the plurality of metal posts. A majority of each of the plurality of metal posts is separated from respective neighboring ones of the plurality of metal posts. An end portion of each of the plurality of metal posts is plated with a metal. The plurality of metal posts is disposed into a metal post-storage. The method further includes retrieving one of the metal posts from a metal-post storage, and bonding the one of the metal posts on a metal pad.

A semiconductor integrated circuit chip, in which multi-core processors are integrated, is usually mounted over an organic wiring board by FC bonding to form a BGA package by being integrated with the substrate. In such a structure, power consumption is increased, and hence the power supplied only from a peripheral portion of the chip is insufficient, so that a power supply pad is also provided in the chip central portion. However, because of an increase in the wiring associated with the integration of a plurality of CPU cores, etc., there occurs a portion between the peripheral portion and the central portion of the chip, where a power supply pad cannot be arranged. According to the outline of the present application, in a semiconductor integrated circuit device such as a BGA, etc., in which a semiconductor chip is mounted over an interposer, such as a multilayer organic wiring board, in a face-up manner, a first group of metal through electrodes, which are provided in the semiconductor chip to supply a power supply potential to a core circuit, etc., and a first metal land over the interposer are interconnected by a first conductive adhesive member film.