The present disclosure relates to an electronic chip comprising a semiconductor substrate carrying at least one metal contact extending, within the thickness of the substrate, along at least one flank of the chip.

Provided is an electronic package, including a first substrate of a first conductive structure and a second substrate of a second conductive structure, where a first conductive layer, a bump body and a metal auxiliary layer of the first conductive structure are sequentially formed on the first substrate, and a metal pillar, a second conductive layer, a metal layer and a solder layer of the second conductive structure are sequentially formed on the second substrate, such that the solder layer is combined with the bump body and the metal auxiliary layer to stack the first substrate and the second substrate.

Provided is an electronic package, including a first substrate of a first conductive structure and a second substrate of a second conductive structure, where a first conductive layer, a bump body and a metal auxiliary layer of the first conductive structure are sequentially formed on the first substrate, and a metal pillar, a second conductive layer, a metal layer and a solder layer of the second conductive structure are sequentially formed on the second substrate, such that the solder layer is combined with the bump body and the metal auxiliary layer to stack the first substrate and the second substrate. Therefore, the arrangement of the bump body and the metal auxiliary layer allows complete reaction of the IMCs after reflowing the solder layer, and the volume of the conductive structures will not continue to shrink. As such, the problem of cracking of the conductive structures can be effectively averted.

A chip structure has a chip body having a plurality of pads, a plurality of metal bumps respectively formed on the pads, and a patterned bump directly formed on the chip body. The patterned bump has at least two different upper and lower plane patterns. A top surface of each of the metal bumps is higher than a height position on which the upper plane pattern is. When the chip structure is ground to the height position, the ground tops of the metal bumps and the upper plane pattern are flush. Therefore, detecting whether the upper plane pattern is exposed determines whether all the metal bumps are exposed and flush to each other to avoid insufficient grinding depth or over-ground.

A package structure for electronic assemblies includes a porous insulation substrate, a conductive material, a first electronic assembly, and a second electronic assembly. The porous insulation substrate is penetrated with a plurality of through holes, and each of the plurality of through holes has a diameter which is larger than 0 and less than 1 um. The conductive material fills the plurality of through holes. The first electronic assembly is arranged under the porous insulation substrate and electrically connected to the conductive material in the plurality of through holes through at least one first conductive bump. The second electronic assembly is arranged over the porous insulation substrate and electrically connected to the conductive material in the plurality of through holes through at least one second conductive bump to electrically connect to the first electronic assembly.

A molded electronic assembly including a circuit substrate, a plurality of electronic devices, and at least one patterned heat dissipation structure is provided. The circuit substrate includes a substrate and a circuit, where the substrate has a top surface, and the circuit has a plurality of signal contacts distributed on the top surface. The electronic devices are disposed on the circuit substrate, and each of the electronic devices has a plurality of device pins connected to the signal contacts. The at least one patterned heat dissipation structure corresponds to a signal contact of the signal contacts and starts from the corresponding signal contact and extends toward a plurality of directions on the top surface of the substrate.

An integrated circuit includes a semiconductor die, a package substrate having opposite first and second surfaces, where the first surface includes a first metal pad, the second surface includes a second metal pad and a third metal pad. The semiconductor die is mounted on the second metal pad and the third metal pad by respective first and second metal interconnects. The package substrate includes a circuit with a single-ended terminal and a pair of differential terminals, where the single-ended terminal coupled to the first metal pad. The backage substrate also includes a metal layer including a first meandered conductor and a second meandered conductor. The first meandered conductor is coupled between a first terminal of the pair of differential terminals and the second metal pad. The second meandered conductor is coupled between a second terminal of the pair of differential terminals and the third metal pad.

A solid-state imaging device encompasses a detector substrate having a first main-surface, on which a plurality of first lands are arranged in a matrix, and a signal-circuit substrate having a second main-surface, on which plurality of second lands are arranged so as to face the arrangement of the first lands. A plurality of tubular bumps, each of which having a flattened plane pattern, and is provided between each of the first lands and each of the second lands. The tubular bumps respectively have major-axis directions to define inclined angles, and are arranged in the matrix such that the inclined angles differ depending on locations of the plurality of tubular bumps.

A solid-state imaging device encompasses a detector substrate having a first main-surface, on which a plurality of first lands are arranged in a matrix, and a signal-circuit substrate having a second main-surface, on which plurality of second lands are arranged so as to face the arrangement of the first lands. A plurality of tubular bumps, each of which having a flattened plane pattern, and is provided between each of the first lands and each of the second lands. The tubular bumps respectively have major-axis directions to define inclined angles, and are arranged in the matrix such that the inclined angles differ depending on locations of the plurality of tubular bumps.

A device comprising an integrated device. The integrated device comprising a die substrate; an interconnect portion coupled to the die substrate, a plurality of pillar interconnects and a passivation layer coupled to the interconnect portion. The interconnect portion includes a first plurality of pads and a second plurality of pads. The first plurality of pads are configured to provide a first plurality of electrical paths for input/output signals. The second plurality of pads are configured to provide a second plurality of electrical paths for power. The plurality of pillar interconnects are coupled to the first plurality of pads and the second plurality of pads. The passivation layer comprises a plurality of openings. The plurality of openings include at least one opening located over a pad from the first plurality of pads.