A substrate that includes a core layer comprising a first surface and a second surface, a plurality of core interconnects located in the core layer, a high-density interconnect portion located in the core layer, a first dielectric layer coupled to the first surface of the core layer, a first plurality of interconnects located in the first dielectric layer, a second dielectric layer coupled to the second surface of the core layer, and a second plurality of interconnects located in the second dielectric layer. The high-density interconnect portion includes a first redistribution dielectric layer and a first plurality of high-density interconnects located in the first redistribution dielectric layer. The high-density interconnect portion may provide high-density interconnects.

A semiconductor device includes: a printed wiring substrate; a semiconductor chip mounted on a first surface of the printed wiring substrate; a sealing resin sealing the semiconductor chip on the first surface of the printed wiring substrate; an electrode pad provided on a second surface on a side opposite to the first surface of the printed wiring substrate; an electrode terminal connected to the electrode pad and protruding from the second surface; and a metal layer provided on a surface of the electrode pad on the electrode terminal side or on the side opposite to the electrode terminal so as to straddle a boundary line of the bonding surface between the electrode terminal and the electrode pad which is at least a boundary line on a side facing an outside of a mounting region of the semiconductor chip.

A substrate that includes a core layer comprising a first surface and a second surface, a plurality of core interconnects located in the core layer, a high-density interconnect portion located in the core layer, a first dielectric layer coupled to the first surface of the core layer, a first plurality of interconnects located in the first dielectric layer, a second dielectric layer coupled to the second surface of the core layer, and a second plurality of interconnects located in the second dielectric layer. The high-density interconnect portion includes a first redistribution dielectric layer and a first plurality of high-density interconnects located in the first redistribution dielectric layer. The high-density interconnect portion may provide high-density interconnects.

A packaged semiconductor device includes at least one semiconductor die having circuitry with circuit nodes coupled to bond pads that have bonding features thereon. A plurality of leads or lead terminals include at least metal bars, wherein the plurality of leads or lead terminals are exclusive of any saw marks. The semiconductor die is flipchip attached with a bonded connection between respective bonding features and respective leads or lead terminals.

A packaged semiconductor device includes at least one semiconductor die having circuitry with circuit nodes coupled to bond pads that have bonding features thereon. A plurality of leads or lead terminals include at least metal bars, wherein the plurality of leads or lead terminals are exclusive of any saw marks. The semiconductor die is flipchip attached with a bonded connection between respective bonding features and respective leads or lead terminals.

A semiconductor device including a first lead electrode and a second lead electrode on a lead frame; a semiconductor stack structure disposed on the lead frame, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a conductive adhesive configured to bond the semiconductor stack structure to the lead frame; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.

A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

The present invention discloses an IC Carrier of a semiconductor package and its manufacturing method. The IC Carrier of the semiconductor package includes a dielectric layer and a patterned conductor layer. The dielectric layer has at least one opening groove. The patterned conductor layer is embedded in the dielectric layer, wherein a part of the patterned conductor layer is as a conductive pillar, which has two exposed ends, and a part of the patterned conductor layer is as a conductive wire, which only has one exposed end.